2SD1820G0L Panasonic

2SD1820G0L electronic component of Panasonic
2SD1820G0L Panasonic
2SD1820G0L Bipolar Transistors - BJT
2SD1820G0L  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of 2SD1820G0L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1820G0L Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SD1820G0L
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 50V 0.5A SMINI-3
Datasheet: 2SD1820G0L Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.203
10$ 0.1627
100$ 0.1394
500$ 0.1267
N/A

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SD1820G0L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1820G0L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820 Silicon NPN epitaxial planar type For general amplication Complementary to 2SB1219 Package Features Low collector-emitter saturation voltage V Code CE(sat) S-Mini type package, allowing downsizing of the equipment and automatic SMini3-G1 insertion through the tape packing. Pin Name 1. Base Absolute Maximum Ratings T = 25C 2. Emitter a 3. Collector Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 30 V CBO Marking Symbol: W Collector-emitter voltage (Base open) V 25 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 500 mA C Peak collector current I 1 A CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E 2 * h V = 10 V, I = 150 mA 85 340 FE1 CE C 1 * Forward current transfer ratio h V = 10 V, I = 500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.35 0.60 V CE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 6 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 2: Rank classication * Rank Q R S No-rank h 85 to 170 120 to 240 170 to 340 85 to 340 FE1 Marking symbol WQ WR WS Product of no-rank is not classied and have no marking symbol for rank. Publication date : October 2008 SJC00227DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820 P T I V I I C a C CE C B 800 240 800 T = 25C a V = 10 V CE T = 25C a 700 700 I = 10 mA B 200 9 mA 8 mA 600 600 7 mA 6 mA 160 5 mA 500 500 4 mA 120 400 400 3 mA 300 300 2 mA 80 200 1 mA 200 40 100 100 0 0 0 0 4 8 12 16 20 0 40 80 120 160 0 2 4 6 8 10 ( ) Collector-emitter voltage V (V) Ambient temperature T C ( ) CE Base current I mA a B V I V I h I CE(sat) C BE(sat) C FE C 100 100 300 I / I = 10 I / I = 10 C B C B V = 10 V CE 250 T = 75C a 10 10 200 25C 25C 25C T = 25C a 1 1 150 75C T = 75C a 100 25C 0.1 25C 0.1 50 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C f I C V V R T E ob CB CER BE 12 120 240 I = 0 E I = 2 mA V = 10 V C CB f = 1 MHz T = 25C T = 25C a a T = 25C a 10 100 200 160 8 80 6 60 120 4 40 80 2 20 40 0 0 0 1 10 100 1 10 100 1000 1 10 100 ( ) ( ) ( ) Collector-base voltage V V Base-emitter resistance R k Emitter current I mA CB BE E 2 SJC00227DED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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