X-On Electronics has gained recognition as a prominent supplier of 2SD2014 darlington transistors across the USA, India, Europe, Australia, and various other global locations. 2SD2014 darlington transistors are a product manufactured by Sanken. We provide cost-effective solutions for darlington transistors, ensuring timely deliveries around the world.

2SD2014 Sanken

2SD2014 electronic component of Sanken
Images are for reference only
See Product Specifications
Part No.2SD2014
Manufacturer: Sanken
Category:Darlington Transistors
Description: Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 75MHz 25 W Through Hole TO-220F
Datasheet: 2SD2014 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.31 ea
Line Total: USD 2.31

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 2.31
10 : USD 1.987
100 : USD 1.5965
500 : USD 1.3117
1000 : USD 1.0869

0 - WHS 2


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 4.5489
3 : USD 4.0982
6 : USD 2.9856
16 : USD 2.8166

     
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We are delighted to provide the 2SD2014 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2014 and other electronic components in the Darlington Transistors category and beyond.

With Infinite heatsink 300s 10ms 1ms DC 100ms 100x2 3A 2A 1A IC=4A Equivalent C circuit B Darlington 2SD2014 (3k)(200) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol Ratings Symbol Ratings Unit Conditions Unit 4.20.2 10.10.2 c 0.5 2.8 VCBO 120 V ICBO VCB=120V 10max m A VCEO 80 IEBO VEB=6V 10max mA V V(BR)CEO V VEBO 6 V IC=10mA 80min 0.2 3.3 a IC 4 hFE VCE=2V, IC=3A 2000min A b IB VCE(sat) 1.5max V 0.5 A IC=3A, IB=3mA PC 25(Tc=25C) VBE(sat) IC=3A, IB=3mA 2.0max V W 1.350.15 Tj fT VCE=12V, IE=0.1A 75typ MHz 150 C 0.15 1.35 COB pF Tstg 55 to +150 VCB=10V, f=1MHz 45typ C +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2 2.54 2.54 n Typical Switching Characteristics (Common Emitter) 2.20.2 Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. BEC b. Lot No. 30 10 3 10 5 10 10 1.0typ 4.0typ 1.5typ VCE(sat)IB Characteristics (Typical) I C VCE Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=4V) 4 3 4 3 3 2 2 2 1 1 1 0 0 0 0132 4 0.2 1 5 10 50 100 021 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=4V) (VCE=4V) 20000 20000 5 10000 10000 5000 5000 1000 1000 500 500 1 100 100 50 50 30 30 0.5 1 5 10 50 100 500 1000 0.03 0.1 0.5 1 4 0.03 0.1 0.5 1 4 Time t(ms) Collector Current I C(A) Collector Current I C(A) Safe Operating Area (Single Pulse) f T IE Characteristics (Typical) Pc Ta Derating (VCE=10V) 25 120 10 Natural Cooling Silicone Grease 5 Heatsink: Aluminum 100 in mm 20 80 1 60 100x 0.5 10 40 Without Heatsink Natural Cooling 20 0.1 Without Heatsink 2 0.05 0 0 0.02 0.05 0.1 0.5 1 4 3 5 50 100 10 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 140 Typ Typ 150x150x2 50x50x2 0.3mA 0.4mA 0.5mA 0.6mA 0.8mA 1.0mA 125C 30C 25C I B=20mA 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Cut-off Frequency f T(MH Z) Collector Current I C(A) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 13.0min 16.9 8.40.2 3.9 0.80.2 0.2 4.00.2X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Sanken manufacturer: Other Similar products are found below : 2SA1294 2SA1386 2SA1386A 2SA1488 2SA1492 2SA1494 2SA1667 2SA1673 2SA1693 2SA1694 2SA1695 2SA1725 2SA1746 2SA1859 2SA1860 2SA1908 2SA1909 2SB1257 2SB1258 2SB1259 2SB1351 2SB1382 2SB1383 2SB1559 2SB1560 2SC2837 2SC2921 2SC3519 2SC3835 2SC3851 2SC3851A 2SC3852A 2SC3856 2SC4024 2SC4131 2SC4140 2SC4153 2SC4381 2SC4382 2SC4466 2SC4467 2SC4468 2SC4546 2SC4886 2SC5071 2SC5100 2SC6011 2SC6145 2SC6145A 2SD2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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