Doc No. TT4-EA-12494 Revision. 4 Product Standards Fast Recovery Diode DA2JF2300L DA2JF2300L Silicon epitaxial planar type Unit: mm 1.25 0.13 For high speed switching circuits 0.35 2 Features Small reverse current IR Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 4A 0.5 0.7 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F5-B JEITA SC-90A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 300 V Internal Connection Non-repetitive peak reverse surge voltage VRSM 300 V 2 *1 IF(AV) 0.3 A Forward current (Average) *2 IFSM 3.0 A Non-repetitive peak forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -40 to +150 C Note) *1: temperature:Ta = 90C, with DC wave and 1 Alumina PC board (Board20 50 , Soldering land2 2 ) *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1 of 4 Established : 2010-03-31 Revised : 2013-05-29 1.7 2.5Doc No. TT4-EA-12494 Revision. 4 Product Standards Fast Recovery Diode DA2JF2300L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 300 mA 1.25 V Reverse current IRRM VRRM = 300 V 1.0 A Terminal capacitance Ct VR = 0 V, f = 1 MHz 3.5 pF IF = 100 mA, IR = 200mA *1 trr 400 ns Reverse recovery time Irr = 0.25 x IR *2 Rth(j-a) Mounted on an alumina PC board 160 C/W Thermal resistance(ch-a) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of lnput and output is 20 MHz 4. *1 trr measurement circuit 50 50 t rr D.U.T. I F 0.25 I R 5.5 I R *2 Mounted on an alumina PC board (Board20 50 , Soldering land2 2 ) Page 2of 4 Established : 2010-03-31 Revised : 2013-05-29