Product Information

VS-10CSH01HM386A

VS-10CSH01HM386A electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers Hypfst Rct 2x5A 100V AEC-Q101

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.966 ea
Line Total: USD 0.97

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.966
10 : USD 0.7878
100 : USD 0.6129
500 : USD 0.5198
1000 : USD 0.4232
1500 : USD 0.4128

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Operating Temperature Range
Product
Brand
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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333 3 VS-10CSH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and rr soft recovery K 175 C maximum operating junction K Anode 1 temperature Cathode Anode 2 Specified for output and snubber operation 1 Low forward voltage drop 2 Low leakage current SMPC (TO-277A) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage PRIMARY CHARACTERISTICS drop and hyper fast recovery time. I 2 x 5 A F(AV) The planar structure and the platinum doped life time control V 100 V R guarantee the best overall performance, ruggedness, and V at I 0.75 V F F reliability characteristics. t 25 ns rr (typ.) These devices are intended for use in snubber, boost, T max. 175 C J lighting, piezo-injection, as high frequency rectifiers, an d Package SMPC (TO-277A) freewheeling diodes. Circuit configuration Common cathode The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM per device 10 Average rectified forward current I T = 155 C F(AV) Sp per diode 5 A per device 130 Non-repetitive peak surge current I T = 25 C FSM J per diode 70 Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 13-Jan-2021 Document Number: 94995 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-10CSH01HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 5 A - 0.92 0.98 V F Forward voltage, per diode V F I = 5 A, T = 150 C - 0.75 0.82 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 4 80 J R R Junction capacitance C V = 100 V - 18 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 25 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -18 - J T = 125 C - 28 - J I = 5 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.8 - J V = 160 V R T = 25 C - 18 - J Reverse recovery charge Q nC rr T = 125 C - 53 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, junction to mount, R -2.5 3.5 C/W thJM per leg Thermal resistance, junction to ambient, R -80- C/W thJA per leg 0.1 g Approximate weight 0.0035 oz. Marking device Case style SMPC (TO-277A) SCH1 100 100 175 C 10 150 C T = 175 C J 1 10 T = 150 C J 125 C 0.1 T = 125 C J T = 25 C J 1 0.01 25 C T = -40 C J 0.001 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 255075 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 94995 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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