DA3X103E0L

Doc No. TT4-EA-12381 Revision. 3 Product Standards Switching Diode DA3X103E0L DA3X103E0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.9 DA3J103E in Mini3 type package 0.4 0.16 3 Features Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 Marking Symbol: 24 (0.95)(0.95) 1.9 Basic Part Number : 2 elements cathode-common type 1. Anode1 Packaging 2. Anode2 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 3. Cathode1,2 Panasonic Mini3-G3-B JEITA SC-59A Code TO-236AA/SOT-23 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 3 Single 100 Forward current IF mA Double 150 Single 225 Peak forward current IFM mA Double 340 Non-repetitive peak Single 500 IFSM mA *1 Double 750 forward surge current 12 Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note) *1 t = 1 s Page 1 of 4 Established : 2010-02-22 Revised : 2013-06-28 1.5 2.8Doc No. TT4-EA-12381 Revision. 3 Product Standards Switching Diode DA3X103E0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 1.2 V Reverse voltage VR 80 V IR = 100 A Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 15 pF IF = 10mA, VR = 6V *1 trr 2 10 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2010-02-22 Revised : 2013-06-28