DB2440100L Panasonic

Doc No. TT4-EA-14120 Revision. 2 Product Standards Schottky Barrier Diode DB2440100L DB2440100L Silicon epitaxial planar type Unit: mm 2.4 0.15 For rectification 2 Features Low forward voltage VF Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 41 1.75 0.85 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic TMiniP2-F2-B JEITA SC-110A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 40 V Internal Connection Maximum peak reverse voltage VRM 40 V 2 *1 IF 1.0 A Forward current *2 IFSM 30 A Non-repetitive peak forward surge current *1 Tj 150 C Junction temperature Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note: *1 Tl = 80 C 1 *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1of 4 Established : 2012-03-02 Revised : 2013-04-19 3.8 4.7Doc No. TT4-EA-14120 Revision. 2 Product Standards Schottky Barrier Diode DB2440100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 1.0 A 0.39 V Reverse current IR VR = 40 V 250 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 50 pF 1 trr IF = IR = 100 mA, Irr = 10 mA 15 ns Reverse recovery time * Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2 of 4 Established : 2012-03-02 Revised : 2013-04-19