33 3 VSKY20401608 www.vishay.com Vishay Semiconductors Schottky Rectifier Surface-Mount FlipKY Gen 2 FEATURES Schottky diode for high-speed switching Very low dimensions - 1.6 mm x 0.8 mm x 0.31 mm 2.0 A forward current Low forward voltage drop (typ. 510 mV at 2.0 A) Low reverse current (< 18 A at 10 V) Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS AVAILABLE 3D Models Models Related Footprints Documents PARTS TABLE MINIMUM CIRCUIT PACKAGE TYPE TAPED UNITS PER REEL PART ORDERING CODE WEIGHT ORDER CONFIGURATION NAME CODE (8 mm TAPE ON 7 REEL) QUANTITY VSKY20401608VSKY20401608-G4-08 Single CLP1608-2L1040.840 mg 5000 5000 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage V 40 V RRM Maximum average forward rectified current V = 0.5 V, R = 100 K/W I 2A F th F(AV) Peak forward surge current 8.3 ms single half sine-wave I 28 A FSM On FR-4 board 50 mm x 50 mm Power dissipation P 1000 mW tot 35 m Cu single sided THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On FR-4 board 50 mm x 50 mm Thermal resistance junction to ambient air R 100 K/W thJA 35 m Cu single sided Maximum operating junction temperature T 125 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT V = 10 V I 18 A R R Leakage current V = 40 V I 150 A R R I = 100 mA V 0.300 0.350 V F F Forward voltage I = 1 A V 0.425 0.470 V F F I = 2 A V 0.510 0.580 V F F Diode capacitance V = 0 V, f = 1 MHz C 340 pF R D Rev. 1.4, 27-Feb-2019 Document Number: 85892 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D MM XXX YYVSKY20401608 www.vishay.com Vishay Semiconductors RATINGS AND CHARACTERISTICS CURVES (T = 25C unless otherwise noted) A 1000 T = 125 C J 100 100 C 25 C 10 50 C 1 75 C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 22792 V - Forward Voltage (V) F Fig. 1 - Typical Forward Current vs. Forward Voltage at Various Temperatures 100 000 T = 125 C J 10 000 100 C 1000 75 C 100 50 C 25 C 10 1 0 5 10 15 20 25 30 35 40 22793 V - Reverse Voltage (V) R Fig. 2 - Typical Reverse Current vs. Reverse Voltage at Various Temperatures 400 350 300 250 200 150 100 50 0 0 5 10 15 20 25 30 35 40 22794 V - Reverse Voltage (V) R Fig. 3 - Typical Capacitance vs. Reverse Voltage Rev. 1.4, 27-Feb-2019 Document Number: 85892 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I - Forward Current (mA) R F C - Typical Capacitance (pF) D