Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J01 0L DSK5J010L Silicon N-channel Junciton FET Unit: mm For low frequency amplificaton / For pyroelctric sensor 2.0 DSK2J01 in SMini3 type package 0.3 0.13 Features 3 High gate-drain Voltage(Source open)VGDO Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol: B6 0.9 (0.65)(0.65) Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source 2. Drain 3. Gate Panasonic SMini3-F2-B JEITA SC-85 Absolute Maximum Ratings Ta = 25 C Code Parameter Symbol Rating Unit Gate-drain voltage (Source short) VGDS -55 V Drain current ID 30 mA Internal Connection Gate current IG 10 mA (G) 3 Power dissipation PD 150 mW Channel temperature Tch 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 2 (S) (D) Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Gate-drain voltage (Source short) VGDS IG = -100 A, VDS = 0 -55 V *1 IDSS VDS = 10 V , VGS = 0 1.0 12.0 mA Drain current Gate-source cutoff current IGSS VGS = -30 V, VDS = 0 -10 nA Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 A -5 V Forward transfer admittance Yfs VDS = 10 V, ID = 5 mA, f =1 kHz 2.5 7.5 mS Small-signal short-circuit input capacitance Ciss 6.0 pF VDS = 10 V, VGS = 0, f = 1 MHz Small-signal reverse transfer capacitance Crss 2.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Rank classification Code PQ R Rank PQ R IDSS (mA) 1.0 to 3.0 2.0 to 6.5 5.0 to 12.0 Marking symbol B6P B6Q B6R 1of 3 Page Established : 2010-10-26 Revised : 2014-03-25 1.25 2.1Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J01 0L Technical Data ( reference ) ID-VGS PD-Ta 8 200 VDS = 10V -40 6 150 25 100 4 50 2 Ta = 85 0 0 0 20 40 60 80 100 120 140 160 180 200 -1.5 -1 -0.5 0 0.5 Temperature Ta () Gate-source voltage VGS (V) ID-VDS Yfs -ID 4 100 Ta= 25 Ta = 25 VGS= 0 V VDS = 10 V 3 10 2 -0.2 V 1 1 -0.4 V -0.6 V 0 0.1 02 468 10 12 0.01 0.1 1 10 Drain current ID (mA) Drain-source voltage VDS (V) Cx-VDS 12 Ta= 25 10 Coss Ciss 8 6 Crss 4 2 0 0 5 10 15 20 Drain-source voltage VDS (V) 2of 3 Page Established : 2010-10-26 Revised : 2014-03-25 Drain current ID (mA) Capacitance C (pF) Power Dissipation PD (mW) Forword transfer admittance Drain current ID (mA) Yfs (mS)