FMM110-015X2F IXYS

FMM110-015X2F electronic component of IXYS
FMM110-015X2F IXYS
FMM110-015X2F MOSFETs
FMM110-015X2F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FMM110-015X2F MOSFETs across the USA, India, Europe, Australia, and various other global locations. FMM110-015X2F MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FMM110-015X2F
Manufacturer: IXYS
Category: MOSFETs
Description: IXYS MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET
Datasheet: FMM110-015X2F Datasheet (PDF)
Price (USD)
300: USD 12.474 ea
Line Total: USD 3742.2 
Availability : 0
  
QtyUnit Price
300$ 12.474
25000$ 12.463

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 25
Multiples : 1
QtyUnit Price
25$ 16.6648
50$ 16.4984
100$ 16.3334
250$ 16.1696
500$ 16.0083
1000$ 15.8483
2500$ 15.6895
5000$ 15.532
10000$ 15.377


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 300
Multiples : 300
QtyUnit Price
300$ 12.474
25000$ 12.463


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 61.8637

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMM110-015X2F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMM110-015X2F and other electronic components in the MOSFETs category and beyond.

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Advance Technical Information TM TrenchT2 HiperFET V = 150V FMM110-015X2F DSS N-Channel Power I = 53A D25 MOSFET R 20m DS(on) 33 T1 t = 85ns rr(typ) 5 5 4 4 T2 11 Phase Leg Topology TM ISOPLUS i4-Pak 2 2 Symbol Test Conditions Maximum Ratings T -55 ... +175 C 1 J T 175 C Isolated Tab JM T -55 ... +175 C stg 5 V 50/60H , RMS, t = 1min, Leads-to-Tab 2500 ~V ISOLD Z T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features F Mounting Force 20..120 / 4.5..27 N/lb. C z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package Symbol Test Conditions Maximum Ratings - Isolated Mounting Surface V T = 25C to 175C 150 V - 2500V Electrical Isolation DSS J z Avalanche Rated V T = 25C to 175C, R = 1M 150 V DGR J GS z Low Q G V Transient 30 V z GSM Low Drain-to-Tab Capacitance z Low Package Inductance I T = 25C 53 A D25 C I T = 25C, Pulse Width Limited by T 300 A DM C JM Advantages I T = 25C 55 A A C z Easy to Mount E T = 25C 800 mJ AS C z Space Savings dV/dt I I , V V ,T 175C 10 V/ns z S DM DD DSS J High Power Density P T = 25C 180 W D C Applications z DC-DC Converters z Battery Chargers Symbol Test Conditions Characteristic Values z Switched-Mode and Resonant-Mode Min. Typ. Max. Power Supplies z DC Choppers C Coupling Capacitance Between Shorted 40 pF P z AC Motor Drives Pins and Mounting Tab in the Case z Uninterruptible Power Supplies d ,d Pin - Pin 1.7 mm z S A High Speed Power Switching d ,d Pin - Backside Metal 5.5 mm Applications S A Weight 9 g 2009 IXYS CORPORATION, All Rights Reserved DS100145(04/09)FMM110-015X2F 2 TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20 V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 2 A DSS DS DSS GS T = 150C 500 A J R V = 10V, I = 55A, Note 1 20 m DS(on) GS D g V = 10V, I = 55A, Note 1 75 115 S fs DS D C 8600 pF iss C V = 0V, V = 25 V, f = 1 MHz 685 pF oss GS DS C 77 pF rss t Resistive Switching Times 33 ns d(on) t V = 10V, V = 0.5 z V , I = 55A 16 ns r GS DS DSS D t R = 3.3 (External) 33 ns d(off) G t 18 ns f Q 150 nC g(on) Q V = 10V, V = 0.5 z V , I = 55A 42 nC gs GS DS DSS D Q 46 nC gd Ref: IXYS CO 0077 R0 R 0.83 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C Unless Otherwise Specified) J 3 Symbol Test Conditions Min. Typ. Max. I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 85 ns I = 55A, -di/dt = 100A/s rr F I 6.80 A RM V = 100V, V = 0V R GS Q 0.29 C RM Note 1: Pulse Test, t 300s, Duty Cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
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