Product Information

FMM75-01F

FMM75-01F electronic component of IXYS

Datasheet
IXYS MOSFET 75 Amps 100V

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 22.1309 ea
Line Total: USD 22.13

24 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 21.489
3 : USD 20.319

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Cnhts
Hts Code
Mxhts
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FMM 75-01F TM I = 75 A HiPerFET Power MOSFET D25 Phaseleg Topology V = 100 V DSS TM in ISOPLUS i4-PAC R = 18 m DSon typ. 3 Preliminary data T1 5 4 T2 1 1 2 5 Features MOSFET T1/T2 TM HiPerFET technology Symbol Conditions Maximum Ratings - low R DSon - low gate charge for high frequency V T = 25C to 150C 100 V DSS VJ operation - unclamped inductive switching (UIS) V 20 V GS capability I T = 25C 75 A D25 C - dv/dt ruggedness I T = 90C 50 A - fast intrinsic reverse diode D90 C TM ISOPLUS i4-PAC package I (body diode) T = 25C 100 A F25 C - isolated back surface I (body diode) T = 90C 60 A F90 C - low coupling capacity between pins and heatsink dv/dt V < V I 300A di /dt 100A/s R = 2 5 V/ns DS DSS F F G - enlarged creepage towards heatsink T = 150C VJ - application friendly pinout E T = 25C 30 mJ AR C - low inductive current path - high reliability - industry standard outline Symbol Conditions Characteristic Values - UL registered E 72873 (T = 25C, unless otherwise specified) VJ min. typ. max. Applications R V = 10 V I = I 18 25 m D D90 DSon GS drives and power supplies battery or fuel cell powered V V = 20 V I = 4 mA 2 4 V GSth D DS automotive, industrial vehicle etc. I V = V V = 0 V T = 25C 0.3 mA VJ secondary side of mains power DSS DS DSS GS T = 125C 0.25 mA VJ supplies I V = 20 V V = 0 V 200 nA GSS GS DS Q 180 nC g V = 10 V V = 0.5 V I = I Q 35 nC GS DS DSS D D90 gs Q 85 nC gd t 20 ns d(on) V = 10 V V = 0.5 V t 60 ns GS DS DSS r t I = I R = 2 80 ns D D90 G d(off) t 60 ns f V (body diode) I = 75 A V = 0 V 1.2 1.5 V F GS F t (body diode) I = 37.5A -di/dt = 100A/s V = 25V 300 ns rr DS F R 0.5 K/W thJC R with heat transfer paste 0.93 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1 - 2 419FMM 75-01F Component Dimensions in mm (1 mm = 0.0394 ) Symbol Conditions Maximum Ratings T -55...+150 C VJ T -55...+125 C stg V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force with clip 20...120 N C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted 40 pF p pins and mounting tab in the case d ,d pin - pin 1.7 mm S A d ,d pin - backside metal 5.5 mm S A Weight 9g IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 2 - 2 419

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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