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FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench MOSFET www.onsemi.com FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 222 A, 2.3 m Features General Description This N-Channel MV MOSFET is produced using ON Max r = 2.3 m at V = 10 V, I = 100 A DS(on) GS D Semiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrr incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain 100% UIL Tested superior switching performance with best in class soft body RoHS Compliant diode. Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D G G G D D S S S TO-220 TO-220F MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Ratings Symbol Parameter Units FDP2D3N10C FDPF2D3N10C V Drain to Source Voltage 100 100 V DS V Gate to Source Voltage 20 20 V GS Drain Current -Continuous T = 25C (Note 3) 222* 222* C I -Continuous T = 100C (Note 3) 157* 157* A D C -Pulsed (Note 1) 888 888 E Single Pulse Avalanche Energy (Note 2) 1176 mJ AS Power Dissipation T = 25C 214 45 C P W D Power Dissipation T = 25C 2.4 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG * Drain current limited by maximum junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDP2D3N10C FDPF2D3N10C Units R Thermal Resistance, Junction to Case, Max. 0.7 3.3 JC C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA Package Marking and Ordering Information Device Marking Device Package Packing Method Quantity FDP2D3N10C FDP2D3N10C TO-220 Tube 50 units FDPF2D3N10C FDPF2D3N10C TO-220F Tube 50 units Semiconductor Components Industries, LLC, 2017 Publication Order Number: March, 2017, Rev. 1.0 FDP2D3N10C / FDPF2D3N10C/D 1