DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application I D BV R max DSS DS(ON) Low Input Capacitance T = +25C C Low Input/Output Leakage 40V 4.7m V = 10V 100A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET features low on-resistance and fast Mechanical Data switching, making it ideal for high efficiency power management applications. Case: TO220-3 Case Material: Molded Plastic, Green Molding Compound, UL Engine Management Systems Flammability Classification Rating 94V-0 Body Control Electronics Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) TO220-3 Top View Bottom View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMT4005SCT TO220-3 50 pieces/tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT4005SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 40 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 100 C Continuous Drain Current (Note 6) A I D 85 T = +70C C 85 Maximum Continuous Body Diode Forward Current (Note 6) T = +25C I A C S 160 Pulsed Drain Current (10s pulse, duty cycle = 1%) A IDM 32.5 Avalanche Current, L=0.1mH A I AS Avalanche Energy, L=0.1mH 52.8 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R C/W JA Total Power Dissipation (Note 6) W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) R C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 3.8 4.7 m R V = 10V, I = 50A DS(ON) GS D Diode Forward Voltage V 1.2 V SD V = 0V, I = 50A GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 3062 C iss V = 20V, V = 0V, DS GS 902 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance C 179 rss 0.67 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (V = 10V) Q 49.1 GS g V = 20V, I = 50A, DD D 10.3 Gate-Source Charge Q nC gs Gate-Drain Charge 13 Q gd Turn-On Delay Time 8.7 t D(ON) Turn-On Rise Time 6.8 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 18.6 I = 50A, R = 3 t D G D(OFF) Turn-Off Fall Time t 7.3 F 31.8 Reverse Recovery Time t ns RR I = 50A, di/dt = 100A/s F Reverse Recovery Charge Q 26.5 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on infinite heat sink. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 June 2016 DMT4005SCT www.diodes.com Diodes Incorporated Document number: DS38889 Rev. 1 - 2