Doc No. TT4-EA-15077 Revision. 1 Product Standards MOS FET FC6B21150L1 FC6B21150L1 Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.14 6 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.3 mW VGS = 3.8 V) 1 2 3 CSPChip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.3 Marking Symbol: 16 Packaging 0.65 0.65 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) (0.42) (0.51) 1. Source1-1 (FET1) 4. Source2-1 (FET2) 2. Gate1 (FET1) 5. Gate2 (FET2) 3. Source1-2 (FET1) 6. Source2-2 (FET2) Absolute Maximum Ratings Ta = 25 C Panasonic MLGA006-W-1721-RA Parameter Symbol Rating Unit JEITA VSS 12 V Code Source-source Voltage *3 VGS 10.5 V Gate-source Voltage *1 IS1 8 A DC Equivalent circuit *2 Source Current IS2 17 A DC *3 ISp 80 A Pulse *1 PD1 0.45 W DC Total Power Dissipation *2 PD2 2.1 W DC Channel Temperature Tch 150 C Tstg -55 to +150 Storage Temperature Range C FET2 *1 Rth1 278 C/W DC Thermal resistance (ch-a) *2 Rth2 59 C/W DC Note *1 Mounted on FR4 board FET1 (25.4mm 25.4mm t1.0mm, 36mm Copper) *2 Mounted on Ceramic substrate (70 mm 70 mm t1.0 mm). *3 t = 10 ms, Duty Cycle 1 % Page 1 of 5 Established : 2015-10-23 Revised : - - 1.67 0.65 0.11Doc No. TT4-EA-15077 Revision. 1 Product Standards MOS FET FC6B21150L1 Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Source-source Breakdown Voltage VSSS IS = 1 mA, VGS = 0 V 12 V Zero Gate Voltage Source Current ISSS VSS = 12 V, VGS = 0 V 1.0 mA VGS = 8 V, VSS = 0 V 10 Gate-source Leakage Current IGSS mA VGS = 5 V, VSS = 0 V 1.0 Gate-source Threshold Voltage Vth IS = 0.84 mA, VSS = 10 V 0.35 0.90 1.4 V RSS(on)1 IS = 4.0 A, VGS = 4.5 V 3 4 5.1 RSS(on)2 IS = 4.0 A, VGS = 3.8 V 3.2 4.3 5.5 Source-source On-state Resistance mW RSS(on)3 IS = 4.0 A, VGS = 3.1 V 3.5 4.8 6.8 RSS(on)4 IS = 4.0 A, VGS = 2.5 V 3.8 5.9 10 Body Diode Forward Voltage VF(s-s) IF = 4.0 A, VGS = 0 V 0.8 1.2 V *1 Ciss 2760 Input Capacitance *1 Coss VSS = 10 V, VGS = 0 V, f = 1 MHz 450 pF Output Capacitance *1 Crss 390 Reverse Transfer Capacitance *1,*2 td(on) VDD = 10 V, VGS = 0 to 4.0 V 4.1 Turn-on delay Time ms *1,*2 tr IS = 4.0 A 5.2 Rise Time *1,*2 td(off) VDD = 10 V, VGS = 4.0 to 0 V 12.9 Turn-off delay Time ms *1,*2 tf IS = 4.0 A 8.3 Fall Time *1 Qg 26 Total Gate Charge VDD = 10 V *1 Qgs VGS = 0 to 4.0 V, 9 nC Gate-source Charge *1 IS = 4.0 A Gate-drain Charge Qgd 8 Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note2 : Measurement circuit VDD = 10 V IS = 4.0 A RL = 2.5 W Vout 90 % S2 Vin 10 % Rg G2 90 % 90 % Vout Rg G1 Vin 10 % 10 % 4 V 50 W S1 0 V td(on) tr td(off) tf PW = 10 ms D.C. 1 % Page 2 of 5 Established : 2015-10-23 Revised : - -