Doc No. TT4-EA-12308 Revision. 2 Product Standards MOS FET MTM861280LBF MTM861280LBF Silicon P-channel MOSFET Unit : mm For Switching Features y Low drain-source On-state Resistance : RDS(on) typ. = 300 m (VGS = -4.0 V) y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) Marking Symbol : ML 1. Drain 4. Source Packaging 2. Drain 5. Drain Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 3. Gate 6. Drain Panasonic WSSMini6-F1 JEITA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain to Source Voltage VDS -20 Internal Connection V Gate to Source Voltage VGS 12 (D) (D) (S) Drain Current ID -1.0 A 6 5 4 *1 IDp -4.0 Drain Current (Pulsed) *2 540 PD1 Total Power Dissipation mW *3 150 PD2 Channel Temperature Tch 150 Operating Ambient Temperature Topr -40 to +85 C Storage Temperature Range Tstg -55 to +150 Note) *1 t 10 s, Duty cycle 1 % 1 2 3 (D) (D) (G) *2 Glass epoxy substrate (25.4 25.4 t 0.8 mm) coated with 2 copper foil (more than 300 mm ) *3 Non-heat sink Pin Name 1. Drain 4. Source 2. Drain 5. Drain 3. Gate 6. Drain Page 1of 6 Established : 2010-02-04 Revised : 2013-10-17 Doc No. TT4-EA-12308 Revision. 2 Product Standards MOS FET MTM861280LBF Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = -1.0 mA, VGS = 0 V -20 V Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V -1.0 A Gate-source Leakage Current IGSS VGS = 10 V, VDS = 0 V 10 A Gate-source Threshold Voltage Vth ID = -1.0 mA, VDS = -10 V -0.45 -1.0 -1.5 V RDS(on)1 ID = -0.5 A, VGS = -4.0 V 300 420 *1 m Drain-source On-state Resistance RDS(on)2 ID = -0.5 A, VGS = -2.5 V 420 560 *1 Yfs ID = -0.5 A, VDS = -10 V 1.0 2.0 S Forward transfer admittance Input Capacitance Ciss 80 VDS = -10 V, VGS = 0 V Output Capacitance Coss 12 pF f = 1 MHz Reverse Transfer Capacitance Crss 12 *2 td(on) VDD = -15 V, VGS = 0 to -4 V 12 Turn-on Delay Time ns *2 tr ID = -0.5 A 6 Rise Time *2 td(off) VDD = -15 V, VGS = -4 to 0 V 17 Turn-off Delay Time ns *2 tf ID = -0.5 A Fall Time 10 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Pulse test *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Page 2of 6 Established : 2010-02-04 Revised : 2013-10-17