BAT750_R1_00001 Panjit

BAT750 SCHOTTKY BARRIER DIODE FEATURES Low VF High current capability 0.120(3.04) 0.110(2.80) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DATA 0.079(2.00) 0.008(0.20) Case : SOT-23, Plastic 0.070(1.80) 0.003(0.08) Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0003 ounces, 0.0084 grams 0.004(0.10) 0.044(1.10) Marking : 750 0.000(0.00) 0.035(0.90) 0.020(0.50) C 0.013(0.35) 3 1 2 A N/C ABSOLUTE MAXIMUM RATINGS Parameter Symbol Limit Unit Collector reverse voltage VR 40 V RMS reverse voltage VR(RMS) 28 V Forward current (continuous) I F 750 mA Forward voltage I F=750mA VF 490 mV Average peak forward current DC=50% 1500 mA I FAV Non repetitive forward current t<100s 12 I FSM A t<8.3ms 5.5 o Power dissipation TA=25 C 350 mW PTOT O Typical thermal resistance, junction to ambient air RJA 286 C/W O Storage temperature range TSTG -55 to + 150 C O Junction temperature 125 C TJ May 9,2016-REV.03 PAGE . 1 0.006(0.15)MIN.BAT750 o ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise stated) Parameter Symbol Conditions Min. Typ. Max. Units Reverse breakdown voltage V(BR)R I R=300A40 60 - V I F=50mA - 250 280 I F=100mA - 270 310 I F=250mA - 310 350 Forward voltage(Note 1) VF I F=500mA - 350 420 mV I F=750mA - 390 490 I F=1000mA - 420 540 I F=1500mA - 490 650 Reverse current I R VR=30V - 50 100 A Off state junction capacitance CJ VR=25V,f=1.0MHZ -18 - pF Note : 1.Measured under pulsed conditions. Pulse width = 300 duty cycle < 2% May 9,2016-REV.03 PAGE . 2