X-On Electronics has gained recognition as a prominent supplier of BC857B_R1_00001 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857B_R1_00001 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857B_R1_00001 Panjit

BC857B_R1_00001 electronic component of Panjit
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Part No.BC857B_R1_00001
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /57B/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TP/GPT03-QI37/PJ///
Datasheet: BC857B_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1069 ea
Line Total: USD 0.11 
Availability - 10031
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10031
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1069
10 : USD 0.0713
100 : USD 0.0368
1000 : USD 0.0322
3000 : USD 0.0265
9000 : USD 0.0253
24000 : USD 0.0207
45000 : USD 0.0196
99000 : USD 0.0184

2716
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.196
10 : USD 0.1372
100 : USD 0.0658
250 : USD 0.0518
500 : USD 0.0462

   
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We are delighted to provide the BC857B_R1_00001 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857B_R1_00001 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES 0.120(3.04) General Purpose Amplifier Applications 0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) 0.047(1.20) Green molding compound as per IEC61249 Std (Halogen Free) 0.079(2.00) 0.008(0.20) 0.003(0.08) 0.070(1.80) MECHANICAL DATA 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) Case: SOT-23 0.020(0.50) Terminals: Solderable per MIL-STD-750, Method 2026 0.013(0.35) Approx. Weight: 0.0003 ounces, 0.008 grams Marking: Device Marking: BC856A=56A BC857A=57A BC858A=58A Top View 3 Collector 3 BC856B=56B BC857B=57B BC858B=58B BC859B=59B Collector 1 BC857C=57C BC858C=58C BC859C=59C Base 1 2 2 Base Emitter Emitter ABSOLUTE RATINGS Parameter Symbol BC856 BC857 BC858 BC859 Units Collector - Emitter Voltage VCEO -65 -45 -30 V Collector - Base Voltage VCBO -80 -50 -30 V Emitter - Base Voltage VEBO -5 V Collector Current - Continuous I C -100 mA Peak Collector Current I CM -200 mA Max Power Dissipation (Note1) PTOT 330 mW o Typical Thermal Resistance, Junction to Ambient RJA 375 C/W o Operating Junction and Storage Temperature Range TJ,TSTG -50 to 150 C NOTES : 2 1. Transistor mounted on FR-4 board 8 cm . October 19,2016-REV.05 PAGE . 1 0.006(0.15)MIN.BC856 SERIES ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units -65 BC856A,B Collector - Emitter Breakdown Voltage BC857A,B,C V (BR)CEO IC=-10mA, IB=0 -45 -- V BC858A,B,C,BC859B,C -30 -80 BC856A,B Collector - Base Breakdown Voltage BC857A,B,C V (BR)CBO IC=-10 A, IE=0 -50 -- V BC858A,B,C,BC859B,C -30 Emitter - Base Breakdown Voltage V(BR)EBO IE=-1 A, IC=0 -5 - - V Emitter-Base Cutoff Current IEBO VEB=-5V - - -100 nA nA VCB=-30V, IE=0 -15 Collector-Base Cutoff Current ICBO -- O VCB=-30V, IE=0,TJ=150 C -4 A 90 BC856A,BC857A,BC858A DC Current Gain BC856B,BC857B,BC858B,BC859B h IC=-10 A, VCE=-5V - 150 -- FE BC857C,BC858C,BC859C 270 110 180 220 BC856A,BC857A,BC858A DC Current Gain BC856B,BC857B,BC858B,BC859B h IC=-2mA, VCE=-5V 220 290 475 - FE BC857C,BC858C,BC859C 420 520 800 IC=-10mA, IB=-0.5mA -0.3 Collector - Emitter Saturation Voltage V CE(SAT) -- V IC=-100mA, IB=-5mA -0.65 IC=-10mA, IB=-0.5mA -0.7 Base - Emitter Saturation Voltage V BE(SAT) - -V IC=-100mA, IB=-5mA -0.9 IC=-2mA, VCE=-5V -0.6 - -0.75 Base - Emitter On Voltage V BE(ON) V IC=-10mA, VCE=-5V - - -0.82 Collector - Base Capacitance CCB VCB=-10V, IE=0, f=1MHz - - 4.5 pF Current-Gain-Bandwidth Product F T IC=-10mA, VCE=-5V,f=100MHz - 200 - MHz October 19,2016-REV.05 PAGE . 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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