Product Information

MMBT5401

MMBT5401 electronic component of Pingjingsemi

Datasheet
Transistors (NPN/PNP) SOT-23 RoHS
Manufacturer: Pingjingsemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0209 ea
Line Total: USD 1.04

22552 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
12707 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 50
Multiples : 50

Stock Image

MMBT5401
Pingjingsemi

50 : USD 0.0201
500 : USD 0.0161
3000 : USD 0.0129
6000 : USD 0.0113
24000 : USD 0.0103
51000 : USD 0.0096

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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Additional Infomation About Product

The MMBT5401 by Pingjingsemi is an NPN (negative-positive-negative) transistor housed in a SOT-23 RoHS (Restriction of Hazardous Substances) package. This transistor has a maximum collector-emitter voltage (Vceo) of 40 volts and a maximum collector current (Ic) of 0.500 amps when used in SOT-23 package configurations. The transistor features an excellent gain (hfe) of 300–900 and a low noise factor (beta) of 0. Shallow trench isolation (STI) technology is used to make the device robust and reliable. The MMBT5401 is a general-purpose transistor suitable for use in a variety of applications including switching circuits, amplifier circuits, and voltage regulator circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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