:The PSB521BS-40 with Schottky Barrier Diodes (SBD) DFN1006-2L RoHS manufactured by PN SILICON is a double-side cooling Silicon Field Effect Transistor (FET) used to protect circuits from the harmful effects of high voltage. The device is designed with a Schottky Barrier Diode (SBD) for current conduction, and a Field Effect Transistor (FET) to provide high blocking voltage capability while ensuring minimal energy losses. As a result, the PSB521BS-40 can be used in a wide range of circuits and applications such as motor speed control, automotive electric drives, and switching applications. It also features high breakdown voltage, reverse leakage current, and thermal stability. The device is RoHS compliant and has a compact dimension of 1006(L)x 5(W) x 5(D) mm. It carries a maximum operating temperature of 100°C and a maximum current of 59A.