Product Information

PSB521BS-40

PSB521BS-40 electronic component of PN SILICON

Schottky Barrier Diodes (SBD) DFN1006-2L RoHS

Manufacturer: PN SILICON
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - Global Stock

MOQ : 20
Multiples : 20

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PSB521BS-40
PN SILICON

20 : USD 0.0313
200 : USD 0.0255
600 : USD 0.0222
2000 : USD 0.0202
10000 : USD 0.0185
20000 : USD 0.0175
N/A

     
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Product Category
Category
Rohs
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:The PSB521BS-40 with Schottky Barrier Diodes (SBD) DFN1006-2L RoHS manufactured by PN SILICON is a double-side cooling Silicon Field Effect Transistor (FET) used to protect circuits from the harmful effects of high voltage. The device is designed with a Schottky Barrier Diode (SBD) for current conduction, and a Field Effect Transistor (FET) to provide high blocking voltage capability while ensuring minimal energy losses. As a result, the PSB521BS-40 can be used in a wide range of circuits and applications such as motor speed control, automotive electric drives, and switching applications. It also features high breakdown voltage, reverse leakage current, and thermal stability. The device is RoHS compliant and has a compact dimension of 1006(L)x 5(W) x 5(D) mm. It carries a maximum operating temperature of 100°C and a maximum current of 59A.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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