Product Information

PPM6N30V9

PPM6N30V9 electronic component of Prisemi

Datasheet
UDFN-6(2x2) MOSFETs ROHS

Manufacturer: Prisemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2843 ea
Line Total: USD 1.42

1876 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1721 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 5
Multiples : 5

Stock Image

PPM6N30V9
Prisemi

5 : USD 0.2136
50 : USD 0.1877
150 : USD 0.1766
500 : USD 0.1628
3000 : USD 0.1566
6000 : USD 0.1529

     
Manufacturer
Product Category
Package
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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The PPM6N30V9 is a UDFN-6(2x2) packaged MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by Prisemi, and is compliant with RoHS (Restriction of Hazardous Substances) compliance standards. It is a low-voltage, low-RDS (on) Automotive-grade MOSFET that offers low on-state resistance, advanced packaging and reliable performance in demanding automotive applications. The low on-state resistance of the device reduces conduction losses, allowing designers to minimize power consumption in their applications. The advanced packaging technology reduces footprint size and helps increase reliability while preventing stress-related failure of the device. The PPM6N30V9 is available in a 4 mm x 3.5 mm UDFN-6 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Shanghai Prisemi Elec

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