Product Information

PE4152A-Z

PE4152A-Z electronic component of pSemi

Datasheet
RF Mixer High-Linearity MOSFET Quad Mixer with LO amplifier
Manufacturer: pSemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 20.6262 ea
Line Total: USD 20.63

289 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

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289 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

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PE4152A-Z
pSemi

1 : USD 18.8255
100 : USD 13.708
1000 : USD 9.66
3000 : USD 9.6485
6000 : USD 8.51

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Additional Infomation About Product

PE4152 Document Category: Product Specification UltraCMOS Quad MOSFET Mixer Features Figure 1 PE4152 Functional Diagram Quad MOSFET array with integrated LO enable and bypass mode V RF DD Ultra high linearity in both LO modes LO enable: 25 dBm IIP3, 52 dBm IIP2 LO bypass: 24 dBm IIP3, 46 dBm IIP2 High isolation in both LO modes LO enable: 30/30 dB LORF/IF LO LO bypass: 60/58 dB LORF/IF Low conversion loss in both LO modes Packaging 20-lead 4 4 0.85 mm QFN Applications Land-mobile-radio (LMR) GND EN MixBias IF (optional) Portable radio Mobile radio Cellular infrastructure Set-top box (STB)/CATV systems Product Description The PE4152 is a high linearity quad metal-oxide-semiconductor field-effect transistor (MOSFET) mixer with an integrated local oscillator (LO) amplifier. The LO amplifier allows for LO input drive levels of less than 0 dBm to produce third-order intercept point (IIP3) values similar to a quad MOSFET array driven with a 15 dBm LO drive. The PE4152 operates with differential signals at the radio frequency (RF) and intermediate frequency (IF) ports and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downcon- verter. The PE4152 also offers an integrated LO amplifier bypass option providing additional flexibility for low power or increased linearity operation. The bypassed LO amplifier allows superior LO to RF and LO to IF isolation levels relative to the enabled mode. The PE4152 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. 20152016, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-64061-4 (04/2016) www.psemi.comPE4152 Quad MOSFET Mixer Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE4152 Parameter/Condition Min Max Unit Supply voltage, V 4.0 V DD Maximum DC plus peak AC across drain-source 3.3 V Maximum DC current across drain-source 6mA mA Maximum AC current across drain-source 36 P-P Storage temperature range 65 +150 C Operating junction temperature +125 C (*) 1000 V ESD voltage HBM, all pins Note: * Human body model (MIL-STD 883 Method 3015). Recommended Operating Conditions Table 2 lists the recommended operating conditions for the PE4152. Devices should not be operated outside the recommended operating conditions listed below. Table 2 Recommended Operating Conditions for PE4152 Parameter Min Typ Max Unit Supply voltage, V 2.9 3.1 V DD Operating temperature range 40 +85 C LO input power (LO enable) 10 6 dBm LO input power (LO bypass) 23 dBm RF input power (LO enable) 2dBm RF input power (LO bypass) 2dBm Page 2 DOC-64061-4 (04/2016) www.psemi.com

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

Psemi may also be referenced as

Peregrine
PEREGRINE SEMICONDUCTOR

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