QPD0050 75 W, 48 V, DC to 3.6 GHz, GaN RF Power Transistor Product Overview The QPD0050 is a wide band plastic over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, 6 Pin 6.6x7.7mm DFN Package microcell, and active antenna systems. The QPD0050 can also be used as a driver in a macrocell base station power amplifier. Key Features Operating Frequency Range: DC to 3.6GHz The wide bandwidth of the QPD0050 makes it suitable for many different applications from DC to 3.6GHz. QPD0050 Operating Drain Voltage: +48V can deliver P of 79.4W at +48V operation at 2.1GHz. (1) SAT Maximum Output Power (P ): 79.4W SAT (1) Maximum Drain Efficiency: 77.9% Lead-free and ROHS compliant. (1) Efficiency-Tuned P3dB Gain: 19.4dB Surface Mount Plastic Package Notes: 1. Load pull performance at 2.1 GHz. Applications Functional Block Diagram W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications Ordering Information Part Number Description QPD0050SR Short Reel 100 Pieces QPD0050TR7 7 Reel 500 Pieces QPD0050PCB4B01 2110 2170 MHz Evaluation Board Data Sheet Rev. C, February 2020 Subject to change without notice 1 of 12 www.qorvo.com QPD0050 75 W, 48 V, DC to 3.6 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Breakdown Voltage (BVDG) +165 V Gate Voltage (VG) 2.7 V Gate Voltage Range (VG) 7 to +2 V Drain Voltage (VD) +48 V Drain Voltage (VD) +55 V Quiescent Drain Current (IDQ) 130 mA Peak RF Input Power 35 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating VSWR Mismatch, P1dB Pulse (20% conditions. 10:1 Duty Cycle, 100 s Width), T = +25C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 2110 2170 MHz Quiescent Drain Current (I ) 130 mA DQ Gain 3 dB Compression 17.5 19.5 dB Power (PSAT) 3 dB Compression 46.5 47.7 dBm Drain Efficiency 3 dB Compression 60.0 72.7 % Gate Leakage Vg = -3.8V, Vd = +10V -11.6 mA Test conditions unless otherwise noted: V = +48V, I = 130 mA, T=+25C, Pulse signal (20% Duty Cycle, 100 s Width) at 2140 MHz on a Class AB D DQ single-ended reference design tuned for 2110-2170 MHz. Thermal Information Parameter Conditions Values Units Doherty Thermal Resistance, Peak IR Surface T = +105C, T = 113C CASE CH 0.9 C/W (1) (2) Temperature at Average Power (JC) CW: PDISS = 8.5 W, POUT = 12.7 W Device Thermal Resistance, Peak IR Surface TCASE = +105C, TCH = 122C 1.3 C/W Temperature at Average Power (JC) CW: PDISS = 13.4 W, POUT = 3.5 W Notes: 1. Based on expected carrier amplifier efficiency of Doherty. 2. P assumes 20% peaking amplifier contribution of total average Doherty rated power. OUT 3. Thermal resistance is measured to package backside. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. C, February 2020 Subject to change without notice 2 of 12 www.qorvo.com