Product Data Sheet August 5, 2008 Q-Band Driver Amplifier TGA4042 Key Features Typical Frequency Range: 41 - 45 GHz 18 dBm Nominal P1dB 14 dB Nominal Gain 17 dB Nominal Return Loss On-Chip Power Detector Bias 6 V, 168 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 3.20 x 2.18 x 0.1 mm (0.126 x 0.086 x 0.004) in Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA Point-to-Point Radio 25 Military Radar Systems GAIN 15 Q Band Sat-Com 5 -5 -15 IRL -25 ORL -35 40 41 42 43 44 45 46 47 Frequency (GHz) 20 19 18 17 16 15 42 42.2 42.4 42.6 42.8 43 Frequency (GHz) Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com P1dB (dBm) Small Signal Gain (dB)Product Data Sheet August 5, 2008 TGA4042 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 8 V 2/ Vg Gate Voltage Range -5 TO 0 V Id Drain Current 294 mA 2/ 3/ Ig Gate Current 14 mA 3/ P Input Continuous Wave Power 21 dBm IN P Power Dissipation 3.3 W 2/ 4/ D 0 T Operating Channel Temperature 150 C5/ 6/ CH 0 T Mounting Temperature (30 Seconds) 320 C M 0 T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 0 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced to 1E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TABLE II DC PROBE TESTS 0 (Ta = 25 C, Nominal) SYMBOL PARAMETER MIN. TYP. MAX. UNITS I Saturated Drain Current 20 57 94 mA DSS,Q1 G Transconductance 44 75 106 mS M,Q1 V Breakdown Voltage Gate-Source -30 -21 -8 V BVGS,Q1 V Breakdown Voltage Gate-Drain -30 -21 -8 V BVGD,Q1 & Q3 V Pinch-Off Voltage -1.5 -1 -0.5 V P,Q1-Q6 Q1& Q2 are 200 um FETs, Q3 & Q4 are 240 um FETs, Q5 & Q6 are 400 um FETs 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com