X-On Electronics has gained recognition as a prominent supplier of MMBT4401 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. MMBT4401 bipolar transistors - bjt are a product manufactured by Rectron. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

MMBT4401

MMBT4401 electronic component of Rectron
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See Product Specifications
Part No. MMBT4401
Manufacturer: Rectron
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT23 NPN 0.6A 40V G enPur
Datasheet: MMBT4401 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3343 ea
Line Total: USD 0.33

Availability - 208359
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
201918 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.115
10 : USD 0.0529
100 : USD 0.046
1000 : USD 0.0426
3000 : USD 0.0299
9000 : USD 0.0265
24000 : USD 0.0253

     
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MMBT4401 Silicon NPN SMD triode 1 base 2 emitter 3 collector Ouline example encapsulation mode SOT-23 Small and medium-sized power amplifier P/N suffix V means AEC-Q101 qualified, e.g: MMBT4401V P/N suffix V means Halogen-free Type Marking MMBT4401 2X Maximum ratings(Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Breakdown Voltage VCBO 60 V Collector-Emitter Breakdown Voltage VCEO 40 V Emitter-Base Breakdown Voltage VEBO 6V Collector Current IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperatuye TJ 150 Storage Temperatuye Tstg Electrical Characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Max Unit Collector-Base Breakdown Voltage VCBO IC=100uA IE=0 60 V Collector-Emitter Breakdown Voltage VCEO IC=1mA IB=0 40 V Emitter-Base Breakdown Voltage VEBO IE=100uA IC=0 6 V Collector Cutoff Current ICBO VCB=40V IE=0 100 nA Collector Cutoff Current ICEX VCB=35V VEB(off) =4V 100 nA Emitter Cutoff Current IEBO VCE=5V IB=0 100 nA HFE(1) VCE=1V IC=10mA 80 DC Current Gain HFE(2) VCE=1V IC=150mA 100 300 HFE(3) VCE=2V IC=500mA 40 IC=500mA IB=50mA 0.8 V Collector-Emitter Saturation Voltage VCE(sat) IC=150mA IB=15mA 0.4 V IC=500mA IB=50mA 1.2 V Collector-Base Saturation Voltage VBE(sat) IC=150mA IB=15mA 1.0 V VCE=10V IC=20mA transition frequency fT 250 MHz f=100MHz 2019-04/17 REV:ADISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only.Typica paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Rectron Semiconductor

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