Product Information

2SK1062(TE85L,F)

Name: 2SK1062(TE85L,F)
Brand: Toshiba
SKU: 2SK1062TE85LF_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

2SK1062(TE85L,F) electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: N-MOSFET; unipolar; 60V; 200mA; 200mW; SC59

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9215 ea
Line Total: USD 0.92

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Thu. 25 Apr to Wed. 01 May MOQ : 1 Multiples : 1 2SK1062(TE85L,F) Toshiba	1 : USD 1.0312 5 : USD 0.8413 25 : USD 0.7328 26 : USD 0.6106 72 : USD 0.5699

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Additional Infomation About Product

The 2SK1062(TE85L,F) is a N-MOSFET unipolar transistor manufactured by Toshiba. It is rated for a maximum collector-emitter voltage of 60V, with a drain current maximum of 200mA and a maximum power dissipation of 200mW. The package type is SC59.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Kind Of Package REEL , TAPE REEL , TAPE
Mounting Smd Smd
Case Sc59 Sc59
Kind Of Channel Enhanced Enhanced
Polarisation Unipolar Unipolar
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 60 V 60 V
Drain Current 200 mA 200 mA
Gate-Source Voltage 20 V 20 V
On-State Resistance 1 Ohms 1 Ohms
Power Dissipation 200 mW 200 mW