Product Information

71V424L15YGI8

71V424L15YGI8 electronic component of Renesas

Datasheet
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.0117 ea
Line Total: USD 12.0117

221 - Global Stock
Ships to you between
Thu. 12 Oct to Mon. 16 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
94 - Global Stock


Ships to you between Thu. 12 Oct to Mon. 16 Oct

MOQ : 1
Multiples : 1
1 : USD 10.192
10 : USD 9.175
25 : USD 8.9875
100 : USD 7.944
500 : USD 7.056
2500 : USD 7.056
5000 : USD 6.972

     
Manufacturer
Renesas
Product Category
SRAM
RoHS - XON
Y Icon ROHS
Memory Size
4 mb it
Organization
512 K X 8
Access Time
15 ns
Interface Type
Parallel
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
Smd/Smt
Package / Case
SOJ - 36
Packaging
Cut Tape
Supply Current - Max
145 mA
Height
2.2 mm
Length
23.4 mm
Memory Type
Sdr
Series
71V424
Type
Asynchronous
Width
10.2 mm
Brand
Renesas
Product Type
Sram
Factory Pack Quantity :
500
Subcategory
Memory Data Storage
Cnhts
8542319000
Hts Code
8542320041
Mxhts
85423201
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3.3V CMOS Static RAM 71V424S 71V424L 4 Meg (512K x 8-Bit) Features Description 512K x 8 advanced high-speed CMOS Static RAM The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized JEDEC Center Power / GND pinout for reduced noise as 512K x 8. It is fabricated using high-performance, high-reliability CMOS Equal access and cycle times technology. This state-of-the-art technology, combined with innovative Commercial and Industrial: 10/12/15ns circuit design techniques, provides a cost-effective solution for high-speed Single 3.3V power supply memory needs. One Chip Select plus one Output Enable pin The IDT71V424 has an output enable pin which operates as fast as Bidirectional data inputs and outputs directly 5ns, with address access times as fast as 10ns. All bidirectional inputs and TTL-compatible outputs of the IDT71V424 are TTL-compatible and operation is from a Low power consumption via chip deselect single 3.3V supply. Fully static asynchronous circuitry is used, requiring Available in 36-pin, 400 mil plastic SOJ package and no clocks or refresh for operation. 44-pin, 400 mil TSOP. The IDT71V424 is packaged in a 36-pin, 400 mil Plastic SOJ and 44- Industrial temperature range (40C to +85C) is available pin, 400 mil TSOP. for selected speeds Functional Block Diagram A0 4,194,304-BIT ADDRESS MEMORY ARRAY DECODER A18 8 8 I/O0 -I/O7 I/O CONTROL 8 WE CONTROL OE LOGIC CS 3622 drw 01 1 May.04.2171V424S, 71V424L, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges (1) Pin Configurations NC 1 NC 44 NC A0 1 36 NC NC 2 43 A18 A1 2 35 A0 3 NC 42 A2 A17 3 34 A18 A1 4 41 A3 A16 4 33 A2 A17 A4 A15 5 32 5 40 OE CS A16 6 31 A3 6 39 I/O0 I/O7 7 71V424 30 A4 A15 7 38 I/O1 PBG36 I/O6 8 29 CS 8 37 OE VDD VSS 9 28 I/00 I/07 9 36 VSS VDD 10 27 I/01 10 35 I/06 71V424 I/O2 I/O5 11 26 I/O4 VDD I/O3 11 PHG44 34 VSS 12 25 WE A14 VSS 13 24 VDD 12 33 A5 A13 14 23 I/02 I/05 13 32 A6 A12 15 22 I/03 I/04 14 31 A7 A11 16 21 A14 WE 15 30 A8 A10 17 20 A5 A13 16 29 A9 NC 18 19 A6 A12 17 28 A7 A11 18 27 SOJ 3622 drw 02 A8 A10 19 26 Top View A9 20 25 NC NC NC 21 24 NC NC 22 23 NOTE: 1. This text does not indicate orientation of actual part-marking. TSOP 3622 drw 11 Top View Pin Description Capacitance (TA = +25C, f = 1.0MHz, SOJ package) A0 A18 Address Inputs Input (1) Symbol Parameter Conditions Max. Unit Chip Select Input CS CIN Input Capacitance VIN = 3dV 7 pF WE Write Enable Input CI/O I/O Capacitance VOUT = 3dV 8 pF OE Output Enable Input 3622 tbl 03 I/O0 - I/O7 Data Input/Output I/O NOTE: 1. This parameter is guaranteed by device characterization, but not production VDD 3.3V Power Power tested. VSS Ground Gnd 3622 tbl 02 (1,2) Truth Table CS OE WE I/O Function LL H DATAOUT Read Data LX L DATAIN Write Data L H H High-Z Output Disabled H X X High-Z Deselected - Standby (ISB) (3) X X High-Z Deselected - Standby (ISB1) VHC 3622 tbl 01 NOTES: 1. H = VIH, L = VIL, x = Don t care. 2. VLC = 0.2V, VHC = VDD -0.2V. 3. Other inputs VHC or VLC. 6.422 May.04.21

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY