F1200NBGI Renesas

F1200NBGI electronic component of Renesas
F1200NBGI Renesas
F1200NBGI RF Amplifier
F1200NBGI  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of F1200NBGI RF Amplifier across the USA, India, Europe, Australia, and various other global locations. F1200NBGI RF Amplifier are a product manufactured by Renesas. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No.F1200NBGI
Manufacturer:Renesas
Category:RF Amplifier
Description:RF Amplifier LOW IF 0.35UM SIGE BASE ARRAY
Datasheet:F1200NBGI Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1: USD 17.1389 /'
Line Total: USD 17.14 
Availability : 0
  
QtyUnit Price
1$ 17.1389
10$ 14.8746
25$ 14.1835
80$ 12.3152
230$ 11.7617
490$ 10.7239
980$ 9.3402
  

Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 490
Multiples : 490
QtyUnit Price
490$ 8.5311
980$ 8.2867
2940$ 8.1522

   
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RoHS - XON
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We are delighted to provide the F1200NBGI from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F1200NBGI and other electronic components in the RF Amplifier category and beyond.

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DATASHEET Intermediate Frequency Digital Variable Gain Amplifier IDTF1200 GENERAL DESCRIPTION FEATURES The IDTF1200 is a Digitally Controlled Intermediate Ideal for high SNR systems Frequency Differential Variable Gain Amplifier for 22 dB typ Maximum Gain BaseStation and other commercial applications with a 23 dB gain control range low IF frequency. The device offers extremely low 7 bit parallel control Noise Figure over the entire gain control range. The device is packaged in compact 5x5 Thin QFNs with 200 0.25 dB Gain Steps ohm differential input and output impedances for ease Excellent NNooiissee FFiigguurree << 33..00 ddBB of integration into the receiver lineup. Versions 5mm x 5mm 28 pin package covering IF frequencies up to 300 MHz with low 200 Differential Input distortion are available. 200 Differential Output COMPETITIVE ADVANTAGE NNFF ddeeggrraaddeess << 22ddBB 1122ddBB rreedduucceedd ggaaiinn 50 MHz 160 MHz frequency range The F1200 acts to enhance system SNR when VGA gain Ultra-Linear: IIPP33 ++4488 ddBBmm ttyyppiiccaall is reduced. The F1200 noise figure (NF) degrades only OO dB slightly (NF slope ~ -0.16 / ) over a 13 dB control External current setting resistor dB range while holding the Output IP3 approximately Fast Gain Step Settling < 20 nsec constant. The resultant improvement in noise can enhance the system SNR up to 2 decibels at low gain settings relative to a standard VGA. DEVICE BLOCK DIAGRAM The device has excellent DNL and INL simplifying digital compensation. The device also offers the extremely low ATTN AMP Harmonic, IM2, and IM3 distortion necessary to drive an Out In ADC directly in an IF sub-sampling application. AMP ATTN out APPLICATIONS In BaseStation Diversity Receivers Digital Pre-Distortion 7 Decode Bias Gain Wave Point-to-Point Radios V CC Control Control Logic Public Safety Receivers STBY I SET V V CC MODE PART MATRIX ORDERING INFORMATION Gain IF freq Part IP3 NF O Range range Omit IDT Tape & 0.75 mm height prefix Reel F1200 22 to -1 48 50 - 160 2.6 package F1206* 20 to -11 47 150 - 250 3.6 IDTF1200NBGI8 Industrial F1207* 20 to -11 46 230 - 300 3.7 Green RF product Line Temp range *Future Product RevO Page 1 of 13 April, 2011 IDT ProprietaryDATASHEET Intermediate Frequency Digital Variable Gain Amplifier IDTF1200 ABSOLUTE MAXIMUM RATINGS V to GND -0.3V to +5.5V CC All other Pins to GND -0.3V to (V +0.25V) CC I to GND -0.3V to +2.2V SET RF Input Power (ATTN IN+, ATTN IN-) G +10 dBm MAX Continuous Power Dissipation 1.5W (Junction Ambient) +41C/W JA (Junction Case) The Case is defined as the exposed paddle +4C/W JC Operating Temperature Range (Case Temperature) T = -40C to +85C C Maximum Junction Temperature 150C Storage Temperature Range -65C to +150C Lead Temperature (soldering, 10s) . +260C KEY FEATURE NOISE FIGURE SLOPE Standard Variable Gain amplifiers exhibit a NF/Gain slope of -1 dB/dB. Practically speaking, as gain is reduced, Noise Figure degrades dB for dB. The F1200 utilizes new technology that flattens the Noise Figure response (~ -0.16 dB/dB) for most of the gain control range while keeping distortion (Output IP3) constant. The result is that NF is improved up to 16 dB vs. a standard VGA at low gain settings. The graph below illustrates this by showing the IDTF1200 NF and IP3O vs. Gain setting contours. 50 45 Output IP3 40 35 30 25 20 15 10 Noise Figure 5 0 -2 0 2 4 6 8 10 12 14 16 18 20 22 Gain (dB) RevO Page 2 of 13 April, 2011 IDT Proprietary NF (dB) and Output IP3 (dBm)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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