X-On Electronics has gained recognition as a prominent supplier of UM6J1NTN MOSFETs across the USA, India, Europe, Australia, and various other global locations. UM6J1NTN MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UM6J1NTN ROHM

UM6J1NTN electronic component of ROHM
UM6J1NTN ROHM
UM6J1NTN MOSFETs
UM6J1NTN  Semiconductors

Images are for reference only
See Product Specifications
Part No. UM6J1NTN
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET PCH 30V 0.2A 6PIN
Datasheet: UM6J1NTN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3948 ea
Line Total: USD 1.97 
Availability - 2560
Ship by Fri. 16 May to Wed. 21 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2560
Ship by Fri. 16 May to Wed. 21 May
MOQ : 5
Multiples : 5
5 : USD 0.3948
50 : USD 0.315
150 : USD 0.1895
500 : USD 0.1608
3000 : USD 0.1481
6000 : USD 0.1404

295
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.74
10 : USD 0.4662
100 : USD 0.2863
500 : USD 0.2134
1000 : USD 0.1914
3000 : USD 0.1529
6000 : USD 0.1474
9000 : USD 0.143

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UM6J1NTN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UM6J1NTN and other electronic components in the MOSFETs category and beyond.

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UM6J1N Datasheet Pch+Pch -30V 200mA Small Signal MOSFET llOutline SOT-363 V -30V DSS SC-88 R (Max.) 1.4 DS(on) UMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two RSU002P03 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 400 mA DP Gate - Source voltage V 20 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2016 ROHM Co., Ltd. All rights reserved. 20160715 - Rev.001 UM6J1N Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -20.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.1 - mV/ temperature coefficient T j referenced to 25 V = -10V, I = -200mA - 0.9 1.4 GS D Static drain - source *3 R V = -4.5V, I = -150mA - 1.4 2.1 DS(on) GS D on - state resistance V = -4V, I = -150mA - 1.6 2.4 GS D Forward Transfer *3 Y V = -10V, I = -150mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160715 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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