Product Information

UM6J1NTN

UM6J1NTN electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET TRANS MOSFET PCH 30V 0.2A 6PIN

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4616 ea
Line Total: USD 0.46

15542 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

UM6J1NTN
ROHM

1 : USD 0.3022
10 : USD 0.2408
30 : USD 0.2145
100 : USD 0.1815
500 : USD 0.167
1000 : USD 0.1582

15542 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

UM6J1NTN
ROHM

1 : USD 0.4616
10 : USD 0.3512
100 : USD 0.2658
500 : USD 0.2207
1000 : USD 0.1851
3000 : USD 0.1531
45000 : USD 0.1519

5723 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 197
Multiples : 1

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UM6J1NTN
ROHM

197 : USD 0.2004
200 : USD 0.1988
500 : USD 0.1689
1000 : USD 0.1593
2000 : USD 0.1576

1885 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 176
Multiples : 1

Stock Image

UM6J1NTN
ROHM

176 : USD 0.5588
250 : USD 0.5476

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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UM6J1N Datasheet Pch+Pch -30V 200mA Small Signal MOSFET llOutline SOT-363 V -30V DSS SC-88 R (Max.) 1.4 DS(on) UMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two RSU002P03 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 400 mA DP Gate - Source voltage V 20 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2016 ROHM Co., Ltd. All rights reserved. 20160715 - Rev.001 UM6J1N Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -20.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.1 - mV/ temperature coefficient T j referenced to 25 V = -10V, I = -200mA - 0.9 1.4 GS D Static drain - source *3 R V = -4.5V, I = -150mA - 1.4 2.1 DS(on) GS D on - state resistance V = -4V, I = -150mA - 1.6 2.4 GS D Forward Transfer *3 Y V = -10V, I = -150mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160715 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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