RTL020P02TR ROHM

RTL020P02TR electronic component of ROHM
RTL020P02TR ROHM
RTL020P02TR MOSFETs
RTL020P02TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTL020P02TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTL020P02TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTL020P02TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P-CH 20V 2A TUMT6
Datasheet: RTL020P02TR Datasheet (PDF)
Price (USD)
3000: USD 0.1291 ea
Line Total: USD 387.3 
Availability : 0
  
QtyUnit Price
3000$ 0.1291
6000$ 0.1291
9000$ 0.1291
12000$ 0.126
15000$ 0.1254

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.6042


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1291
6000$ 0.1291
9000$ 0.1291
12000$ 0.126
15000$ 0.1254

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTL020P02TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTL020P02TR and other electronic components in the MOSFETs category and beyond.

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RTL020P02 Transistors 2.5V Drive Pch MOSFET RTL020P02 z Dimensions (Unit : mm) z Structure Silicon P-channel TUMT6 MOSFET z Features 1) Low on-resistance. (180m at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Abbreviated symbol : WU z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 3000 2 RTL020P02 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 12 V Continuous ID 2 A Drain current 1 Pulsed IDP 8 A Source current Continuous I 0.8 A S 1 (Body diode) Pulsed ISP 8 A 2 Total power dissipation PD 1 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C / W Mounted on a ceramic board. Rev.B 1/4 0.2Max.RTL020P02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 20 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 100 135 m I = 2A, V = 4.5V D GS Static drain-source on-state RDS (on) 110 150 m ID= 2A, VGS= 4V resistance 180 250 m ID= 1A, VGS= 2.5V Forward transfer admittance Yfs 1.2 SVDS= 10V, ID= 1A Input capacitance C 430 pF V = 10V iss DS Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time t 11 ns ID= 1A d (on) VDD 15V Rise time tr 13 ns VGS= 4.5V Turn-off delay time td (off) 38 ns RL=15 Fall time tf 12 ns RG=10 Q 4.9 nC V 15V RL=7.5 Total gate charge g DD Gate-source charge Qgs 1.2 nC VGS= 4.5V RG=10 Gate-drain charge Qgd1.3 nC ID= 2A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.8A, VGS=0V Rev.B 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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