2SC4102T106S ROHM

2SC4102T106S electronic component of ROHM
2SC4102T106S ROHM
2SC4102T106S Bipolar Transistors - BJT
2SC4102T106S Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SC4102T106S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4102T106S Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SC4102T106S
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 120 V 50 mA 140MHz 200 mW Surface Mount UMT3
Datasheet: 2SC4102T106S Datasheet (PDF)
Price (USD)
395: USD 0.1031 ea
Line Total: USD 40.72 
Availability : 0
  
QtyUnit Price
395$ 0.1031
500$ 0.1028
1000$ 0.0895

 2SC4102T106S More Buying Options & Price Grid(s)
Availability 0
Ship by Wed. 03 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5452
10$ 0.4222
100$ 0.287
500$ 0.2153
1000$ 0.1615

Availability 0
Ship by Wed. 03 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5452
10$ 0.4222
100$ 0.287
500$ 0.2153
1000$ 0.1615

Availability 0
Ship by Wed. 03 Sep to Tue. 09 Sep
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1586
6000$ 0.1431
15000$ 0.1339
30000$ 0.1307

Availability 0
Ship by Mon. 01 Sep to Wed. 03 Sep
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1265
6000$ 0.1144
9000$ 0.1034
24000$ 0.1034

Availability 0
Ship by Wed. 03 Sep to Tue. 09 Sep
MOQ : 226
Multiples : 1
QtyUnit Price
226$ 0.2971
239$ 0.2803
500$ 0.2233
1000$ 0.1998

Availability 0
Ship by Wed. 03 Sep to Tue. 09 Sep
MOQ : 395
Multiples : 1
QtyUnit Price
395$ 0.1031
500$ 0.1028
1000$ 0.0895

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4102T106S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4102T106S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC4102 / 2SC3906K Datasheet High-voltage Amplifier Transistor (120V, 50mA) llOutline Parameter Value SOT-323 SOT-346 V 120V CEO I 50mA C 2SC4102 2SC3906K (UMT3) (SMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =120V) CEO 2)Complements the 2SA1579/2SA1514K. llApplication HIGH-VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width hFE Part No. Package ordering Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SC4102 2021 T106 180 8 3000 RS T (UMT3) SOT-346 2SC3906K 2928 T146 180 8 3000 RS T (SMT3) www.rohm.com 1/7 20170203 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. 2SC4102 / 2SC3906K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 100V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 500 mV CE(sat) C B h V = 6V, I = 2mA DC current gain 180 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.5 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/7 20170203 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
ROHM Semicon
ROHM Semiconductor

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