2SD1980 Datasheet Power Transistor (100V, 2A) llOutline TO-252 Parameter Value SC-63 V 100V CEO I 2A C R 3.5k 1 CPT R 300 2 llFeatures llInner circuit 1)Darlington connection for high DC current again. 2)Built-in resistor between base and emitter. 3)Built -in damper diode. 4)Complements the 2SB1316. llApplication RELAY DRIVE, MOTOR DRIVE llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) TO-252 2SD1980 6595 TL 330 16 2500 D1980 (CPT) www.rohm.com 1/6 20160525 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SD1980 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 100 V CBO V Collector-emitter voltage 100 V CEO V Emitter-base voltage 6 V EBO I 2 A C Collector current *1 I 3 A CP P 1.0 W D Power dissipation *2 P 10 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 100 - - V CBO C voltage Collector-emitter breakdown BV I = 5mA 100 - - V CEO C voltage BV I = 5mA Emitter-base breakdown voltage 6 - - V EBO E I V = 100V Collector cut-off current - - 10 A CBO CB I Emitter cut-off current V = 5V - - 3 mA EBO EB *3 Collector-emitter saturation voltage I = 1A, I = 1mA V - - 1.5 V C B CE(sat) *3 DC current gain V = 2V, I = 1A 1k - 10k - h CE C FE V = 5V, I = -0.1A, CE E Transition frequency f - 80 - MHz T f = 30MHz V = 10V, I = 0A, CB E C Output capacitance - 25 - pF ob f = 1MHz * Pw=100ms, Single Pulse. *2 Tc=25 *3 Pulsed www.rohm.com 2/6 20160525 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.