2SD2114K Datasheet High-current Gain Medium Power Transistor (20V, 500mA) llOutline Parameter Value SMT3 V 20V CEO I 0.5A C SOT-346 SC-59 llFeatures 1)High DC current gain llInner circuit 2)High emitter-base voltage. V =12V EBO 3)Low V . CE(sat) V =180mV(Typ.) CE(sat) (I /I =500mA/20mA) C B llApplication LOW FREQUENCY AMPLIFIER, MUTING, DC-DC CONVERTER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD2114K SMT3 2928 T146 180 8 3000 BB www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2114K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 25 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 12 V EBO I 0.5 A C Collector current *1 I 1.0 A CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 25 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 12 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB I Emitter cut-off current V = 10V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 20mA - 180 400 mV CE(sat) C B h DC current gain V = 3V, I = 10mA 820 - 2700 - FE CE C V = 10V, I = -50mA, CE E Transition frequency f - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E Output capacitance C - 8.0 - pF ob f = 1MHz V = 100mVrms, i R On resistance - 0.8 - on I = 1mA, f = 1kHz B (See test circuit) hFE values are calssified as follows : rank V W - - - h 820-1800 1200-2700 - - - FE *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.