2SD2153T100V ROHM

2SD2153T100V electronic component of ROHM
2SD2153T100V ROHM
2SD2153T100V Bipolar Transistors - BJT
2SD2153T100V  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of 2SD2153T100V Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2153T100V Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SD2153T100V
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 25 V 2 A 110MHz 2 W Surface Mount MPT3
Datasheet: 2SD2153T100V Datasheet (PDF)
Price (USD)
3: USD 0.3514 ea
Line Total: USD 1.05 
Availability : 0
  
QtyUnit Price
3$ 0.3514
25$ 0.308
68$ 0.232
185$ 0.2198

Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4983
2000$ 0.4465
5000$ 0.4241
10000$ 0.4082
25000$ 0.3955


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0875
10$ 0.9408
100$ 0.7334
500$ 0.6059


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0875
10$ 0.9408
100$ 0.7334
500$ 0.6059


Availability 0
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4625
10$ 0.8808
100$ 0.5478
500$ 0.451
1000$ 0.4037
2000$ 0.3685
5000$ 0.3608
10000$ 0.3487
25000$ 0.3476


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 376
Multiples : 1
QtyUnit Price
376$ 0.6917
402$ 0.6471


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 376
Multiples : 1
QtyUnit Price
376$ 0.6917
402$ 0.6471


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 376
Multiples : 1
QtyUnit Price
376$ 0.6917


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 376
Multiples : 1
QtyUnit Price
376$ 0.6917


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 183
Multiples : 1
QtyUnit Price
183$ 0.5084
250$ 0.4798


Availability 0
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 0.3514
25$ 0.308
68$ 0.232
185$ 0.2198


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 226
Multiples : 1
QtyUnit Price
226$ 0.4712
250$ 0.4524
500$ 0.436
1000$ 0.4218
2500$ 0.4094


Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 41
Multiples : 1
QtyUnit Price
41$ 1.0108
83$ 0.494
100$ 0.4518
200$ 0.4485
500$ 0.3657
1000$ 0.3413

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2153T100V from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2153T100V and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SD2153 Datasheet High gain amplifier transistor (25V / 2A) llOutline SOT-89 Parameter Value SC-62 V 25V CEO I 2A C MPT3 llFeatures llInner circuit 1)Low saturation voltage. typically V =120mV at I /I =1A/20mA CE(sat) C B 2)High DC current gain llApplication LOW FREQUENCY POWER AMP llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SD2153 4540 T100 180 12 1000 DN (MPT3) www.rohm.com 1/6 20160129 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SD2153 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 25 V CEO V Emitter-base voltage 6 V EBO I 2 A C Collector current *1 I 3 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 25 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 6 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB I Emitter cut-off current V = 5V - - 500 nA EBO EB *4 Collector-emitter saturation voltage V I = 1A, I = 20mA - - 500 mV C B CE(sat) *4 DC current gain V = 6V, I = 0.5A 560 - 2700 - h CE C FE V = 10V, I = -10mA, CE E f Transition frequency - 110 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 22 - pF ob f = 1MHz hFE values are calssified as follows : rank U V W - - h 560-1200 820-1800 1200-2700 - - FE *1 Single Pulse, Pw=10ms *2 Each terminal mounted on a reference land. *3 Mounted on a 40400.7mm ceramic board. *4 Pulsed www.rohm.com 2/6 20160129 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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