2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 z Dimensions (Unit : mm) z Structure Silicon N-channel EMT3 MOSFET 0.7 1.6 0.55 0.3 (3) z Applications (2) (1) Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source z Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated symbol : KN 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. z Packaging specifications z Equivalent circuit Package Taping Drain Code TL Type Basic ordering unit 3000 (pieces) 2SK3019 Gate z Absolute maximum ratings (Ta=25C) Gate Protection Diode Parameter Symbol Limits Unit Source Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V A protection diode is included between the gate and the source terminals to protect the diode Continuous ID 100 mA against static electricity when the product is in use. Drain current 1 Use a protection circuit when the fixed voltages Pulsed IDP 400 mA are exceeded. 2 Total power dissipation PD 150 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 833 C / W With each pin mounted on the recommended lands. Rev.C 1/3 Not Recommended for New Designs 0.8 1.6 0.1Min.2SK3019 Transistor z Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Parameter IGSS 1 AVGS=20V, VDS=0V Gate-source leakage V(BR)DSS 30 V ID=10A, VGS=0V Drain-source breakdown voltage IDSS 1.0 A VDS=30V, VGS=0V Zero gate voltage drain current VGS(th) 0.8 1.5 V VDS=3V, ID=100A Gate threshold voltage RDS(on) 5 8 ID=10mA, VGS=4V Static drain-source on-state resistance RDS(on) 713 ID=1mA, VGS=2.5V Yfs 20 ms ID=10mA, VDS=3V Forward transfer admittance Ciss 13 pF VDS=5V Input capacitance Coss 9 pF VGS=0V Output capacitance Reverse transfer capacitance Crss 4 pF f=1MHz td(on) 15 ns Turn-on delay time ID=10mA, VDD 5V tr 35 ns VGS=5V Rise time Turn-off delay time td(off) 80 ns RL=500 tf 80 ns Fall time RG=10 z Electrical characteristic curves 0.15 200m 2 VDS=3V VDS=3V 4V 100m ID=0.1mA 3V Pulsed Ta=25C Pulsed Pulsed 50m 3.5V 1.5 20m 0.1 10m 5m 1 2.5V 2m Ta=125C 0.05 1m 75C 0.5 25C 2V 0.5m 25C 0.2m VGS=1.5V 0.1m 0 0 0 1 23 45 041 2 3 50 25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 50 15 50 VGS=4V VGS=2.5V Ta=25C Pulsed Ta=125C Pulsed Pulsed 75C Ta=125C 20 20 25C 75C 25C 25C 10 10 10 25C 5 5 5 2 2 ID=0.1A 1 1 ID=0.05A 0.5 0.5 0 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state Fig.6 Static drain-source Fig.5 Static drain-source on-state resistance vs. drain current () on-state resistance vs. resistance vs. drain current () gate-source voltage Rev.C 2/3 Not Recommended for New Designs STATIC DRAIN-SOURCE DRAIN CURRENT : ID (A) ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE DRAIN CURRENT : ID (A) ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE GATE THRESHOLD VOLTAGE : VGS(th) (V) ON-STATE RESISTANCE : RDS(on) ()