BCX71H/T1 ROHM

PNP small signal transistor BCX71H Features Dimensions (Unit : mm) 1) Ideal for switching and AF amplifier applications. BCX71H 2) Complements the BCX70. 2.9 0.95 0.4 0.45 (3) Packaging specifications ( ) ( ) 2 1 Package Taping 0.95 0.95 0.15 Type Code T116 1.9 Basic ordering unit (pieces) 3000 (1)Emitter Each lead has same dimensions (2)Base BCX70H Abbreviated symbol : GBH (3)Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 45 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 0.2 A 0.2 W Collector power dissipation PC 0.35 W Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Mounted on a 750.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 45 VIC= 2mA Emitter-base breakdown voltage BVEBO 5 V IC= 10A Collector-emitter cutoff current ICES 0.1 A VCE= 45V Emitter-base cutoff current IEBO 0.1 A VEB= 4V VCE(sat)1 0.25 V IC/IB= 10mA/ 0.25mA Collector-emitter saturation voltage VCE(sat)2 0.55 V IC/IB= 50mA/ 1.25mA VBE(sat)1 0.85 V IC/IB= 10mA/ 0.25mA Base-emitter saturation voltage VBE(sat)2 1.05 V IC/IB= 50mA/ 1.25mA Base-emitter voltage VBE(on) 0.6 0.75 V VCE= 5V, IC= 2mA 140 310 VCE= 5V, IC= 2mA DC current transfer ratio hFE 80 VCE= 5V, IC= 50mA Transition frequency fT 180 MHz VCE= 5V, IE= 10mA, f=100MHz Collector output capacitance Cob 6VpF CB= 10V, f=1MHz Noise figure NF 6VdB CE= 5V, IC= 200A, f=1kHz,Rg=2k Collector-base cutoff current ICBO 20 A VCB= 45V, Ta=150C www.rohm.com 2011.11 - Rev.B c 2011 ROHM Co., Ltd. All rights reserved. 1/2 Not Recommended for New Designs 1.3 2.4 0.2Min.Cib Cob BCX71H Data Sheet Electrical characteristics -100 -100 1000 I =-500uA B Ta=25C Ta=25C -450uA V =-5V CE -400uA -80 I =-350uA B -10 Ta=125C I =-300uA 75C -60 B 25C I =-250uA B 100 -55C I =-200uA B V =-5V -40 CE -1 I =-150uA -3V B -1V I =-100uA B -20 I =-50uA B I =0A B 10 -0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1 -10 -100 -1000 0 -1-2-3-4-5-6-7 -8-9 -10 BASE TO EMITTER VOLTAGE : V (V) COLLECTOR CURRENT : I (mA) C BE COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig1. Grounded Emitter Propagation Fig2. Grounded Emitter Output Fig3. DC Current Gain vs. Characteristics Characteristics Collector Current (I) -1 1 1000 Ta=25C V =-5V CE I /I =40/1 C B Ta=125C 75C I /I =40/1 C B 25C 20/1 -55C 10/1 -0.1 100 0.1 Ta=125C 75C 25C -55C 10 -0.01 0.01 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT : I (mA) C COLLECTOR CURRENT : I (mA) C COLLECTOR CURRENT : I (mA) C Fig5. Collector Saturation Voltage Fig4. DC Current Gain vs. Fig6. Collector Saturation Voltage vs. Collector Current (I) Collector Current (II) vs. Collector Current (II) 1000 20 -10 Ta=25C Ta=25C I /I =4 0/1 C B VCE= 12V f=1MHz IE=0A 500 IC=0A 10 Ta=-55C 25C 75C 125C 200 5 -1 100 2 50 -0.1 0.5 12 5 10 20 50 100 0.5 1 2 5 10 20 -1 -10 -100 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : I (mA) C EMITTER TO BASE VOLTAGE : VEB (V) Fig7. Base Saturation Voltage Fig.9 Collector output capacitance vs. Fig.8 Gain bandwidth product vs. vs. Collector Current emitter current collector-base voltage Emitter inputcapacitance vs. emitter-base voltage www.rohm.com 2011.11 - Rev.B c 2011 ROHM Co., Ltd. All rights reserved. 2/2 Not Recommended for New Designs BASE SATURATION VOLTAGE : V DC CURRENT GAIN : h COLLECTOR CURRENT : I )( mA BE(sat) FE C ( V) COLLECTOR SATURATION VOLTAGE : V CE(sat) ( V) COLLECTOR CURRENT : I )( mA C TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : V CE(sat) ( V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : h F E EMITTER INPUT CAPACITANCE : Cib (pF)