Product Information

BR24T512FVT-3AME2

BR24T512FVT-3AME2 electronic component of ROHM

Datasheet
EEPROM EEPROM OF I²C BUS

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9221 ea
Line Total: USD 1.92

2900 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2900 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.9221
10 : USD 1.7441
100 : USD 1.5781
500 : USD 1.5543
1000 : USD 1.495
3000 : USD 1.4119
6000 : USD 1.4001

     
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Supply Voltage - Max
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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T512-3AM General Description 2 BR24T512-3AM is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port 1.7V to 5.5V single power source operation most suitable for battery use SOP-J8 TSSOP-B8 1.7V to 5.5V wide limit of operating voltage, possible 4.90mm x 6.00mm x 1.65mm 3.00mm x 6.40mm x 1.20mm 1MHz operation Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption SOP8 Prevention of Write Mistake 5.00mm x 6.20mm x 1.71mm WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles Figure.1 More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh AEC-Q100 Grade3 Qualified Page Write Page Size 128 Bytes Product number BR24T512-3AM BR24T512-3AM Bit Power Supply Capacity Type Package Format Voltage BR24T512FVT-3AM TSSOP-B8 512Kbit 64Kx8 BR24T512FJ-3AM SOP-J8 1.7V to 5.5V BR24T512F-3AM SOP8 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays . www.rohm.com TSZ02201-0GFG0G100420-1-2 2016 ROHM Co., Ltd. All rights reserved. 1/29 15.Jul.2016 Rev.001 TSZ2211114001 DatasheetDatasheet BR24T512-3AM Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input voltage/Output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input -0.3 to Vcc+1.0 V Output Voltage voltage/Output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic Discharge Voltage V -4000 to +4000 V ESD (Human Body Model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Thermal Resistance Thermal Resistance (Typ) Parameter Symbol Unit (Note3) (Note4) 1s 2s2p TSSOP-B8 Junction to Ambient 251.9 152.1 C/W JA (Note2) Junction to Top Characterization Parameter 31 20 C/W JT SOP-J8 Junction to Ambient 149.3 76.9 C/W JA (Note2) Junction to Top Characterization Parameter 18 11 C/W JT SOP8 Junction to Ambient 197.4 109.8 C/W JA (Note2) Junction to Top Characterization Parameter 21 19 C/W JT (Note1)Based on JESD51-2A(Still-Air) (Note2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note3)Using a PCB board based on JESD51-3. Layer Number of Material Board Size Measurement Board Single FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70m (Note4)Using a PCB board based on JESD51-7. Layer Number of Material Board Size Measurement Board 4 Layers FR-4 114.3mm x 76.2mm x 1.6mmt Top 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70m 74.2mm x 74.2mm 35 m 74.2mm x 74.2mm 70 m Memory Cell Characteristics (Ta=25C, V =1.7V to 5.5V) CC Limit Parameter Unit Min Typ Max (Note1) 1,000,000 - - Times Write Cycles (Note1) Data Retention 40 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Rating Parameter Symbol Unit Min Max Power Source Voltage Vcc 1.7 5.5 V Input Voltage V 0 Vcc IN Bypass Capacitor C 0.1 - F www.rohm.com TSZ02201-0GFG0G100420-1-2 2016 ROHM Co., Ltd. All rights reserved. 2/29 15.Jul.2016 Rev.001 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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