Datasheet Serial EEPROM Series Automotive EEPROM 125C Operation SPI BUS EEPROM BR25H640-2AC General Description BR25H640-2AC is a 64Kbit Serial EEPROM of SPI BUS interface method. Features Packages W(Typ) x D(Typ) x H(Max) SPI BUS interface (CPOL, CPHA)=(0,0), (1,1) Voltage Range : 2.5V to 5.5V Operating Range : -40C to +125C Clock Frequency : 10MHz(Max) Write Time : 4ms(Max) Page Size : 32bytes Bit Format : 8192 x 8bit MSOP8 TSSOP-B8 32bytes Write Lockable Identification Page (ID Page) 3.00mm x 6.40mm x 1.20mm 2.90mm x 4.00mm x 0.90mm Address Auto Increment Function at Read Operation Auto Erase and Auto End Function at Data Rewrite Write Protect Block Setting by Software Memory Array 1/4, 1/2, Whole HOLD Function by HOLDB Pin Low Supply Current Write Operation (5V) : 1.0mA (Typ) Read Operation (5V) : 1.2mA (Typ) Standby State(5V) : 0.1A (Typ) SOP8 SOP-J8 Prevention of Write Mistake 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Write prohibition at Power On Write prohibition by WPB Pin Write prohibition Block Setting Prevention of Write Mistake at Low Voltage Write Cycles : 1,000,000 Write Cycles (Ta85C) : 500,000 Write Cycles (Ta105C) : 300,000 Write Cycles (Ta125C) Data Retention : 100 Years (Ta25C) : 60 Years (Ta105C) : 50 Years (Ta125C) Data at Shipment Memory Array FFh ID Page First 3 Addresses 2Fh, 00h, 0Dh Other Addresses FFh Status Register WPEN, BP1, BP0 0, 0, 0 Lock Status LS 0 MSOP8, TSSOP-B8, SOP8, SOP-J8 Packages AEC-Q100 Qualified Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www .rohm.com TSZ02201-0R1R0G100210-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/36 16.Feb.2016 Rev.002 TSZ2211114001 DatasheetDatasheet BR25H640-2AC Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Supply Voltage Vcc -0.3 to +6.5 V (Note1) 0.38 (MSOP8) (Note2) 0.41 (TSSOP-B8) Power Dissipation Pd W (Note3) 0.56 (SOP8) (Note4) 0.56 (SOP-J8) Storage Temperature Range Tstg -65 to +150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to +6.5 V Maximum Junction Temperature Tjmax 150 C Electrostatic Discharge Voltage VESD -6000 to +6000 V (Human Body Model) (Note1) Derate by 3.1mW/C when operating above Ta=25C (Note2) Derate by 3.3mW/C when operating above Ta=25C. (Note3) Derate by 4.5mW/C when operating above Ta=25C. (Note4) Derate by 4.5mW/C when operating above Ta=25C. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Vcc=2.5V to 5.5V) Limit Parameter Unit Condition Min Typ Max 1,000,000 Cycles Ta85C (Note5, 6) Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C (Note5) Data Retention 60 Years Ta105C 50 Years Ta125C (Note5) Not 100% TESTED (Note6) The Write Cycles is defined for unit of 4 data bytes with the same address bits of A12 to A2. Recommended Operating Ratings Rating Parameter Symbol Unit Min Max Supply Voltage Vcc 2.5 5.5 V Input Voltage VIN 0 Vcc V Bypass Capacitor C 0.1 F Input / Output Capacitance (Ta=25C, Frequency=5MHz) Parameter Symbol Conditions Min Max Unit (Note7) Input Capacitance CIN VIN=GND 8 pF (Note7) Output Capacitance COUT VOUT=GND 8 pF (Note7) Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100210-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/36 16.Feb.2016 Rev.002 TSZ2211115001