Product Information

BR25H256F-2ACE2

BR25H256F-2ACE2 electronic component of ROHM

Datasheet
EEPROM SPI BUS 10MHz 256Kbit 2.5-5.5V

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1403 ea
Line Total: USD 3.14

254 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
233 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 2.7255
10 : USD 2.438
100 : USD 2.139
500 : USD 2.139
1000 : USD 2.024
2500 : USD 1.9665
5000 : USD 1.863
10000 : USD 1.84
25000 : USD 1.8285

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Qualification
Packaging
Brand
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Datasheet Serial EEPROM Series Automotive EEPROM 125C Operation SPI BUS EEPROM BR25H256-2AC General Description BR25H256-2AC is a 256Kbit Serial EEPROM of SPI BUS interface method. Features Packages W(Typ) x D(Typ) x H(Max) SPI BUS interface (CPOL, CPHA)=(0,0), (1,1) Voltage Range : 2.5V to 5.5V Operating Range : -40C to +125C Clock Frequency : 10MHz(Max) Write Time : 4ms(Max) Page Size : 64bytes Bit Format : 32768 x 8bit 64bytes Write Lockable Identification Page (ID Page) SOP8 SOP-J8 Address Auto Increment Function at Read Operation 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Auto Erase and Auto End Function at Data Rewrite Write Protect Block Setting by Software Memory Array 1/4, 1/2, Whole HOLD Function by HOLDB Pin Low Supply Current Write Operation (5V) : 1.0mA (Typ) Read Operation (5V) : 1.2mA (Typ) Standby State(5V) : 0.1A (Typ) Prevention of Write Mistake Write prohibition at Power On Write prohibition by WPB Pin Write prohibition Block Setting Prevention of Write Mistake at Low Voltage Write Cycles : 1,000,000 Write Cycles (Ta85C) : 500,000 Write Cycles (Ta105C) : 300,000 Write Cycles (Ta125C) Data Retention : 100 Years (Ta25C) : 60 Years (Ta105C) : 50 Years (Ta125C) Data at Shipment Memory Array FFh ID Page First 3 Addresses 2Fh, 00h, 0Fh Other Addresses FFh Status Register WPEN, BP1, BP0 0, 0, 0 Lock Status LS 0 SOP8, SOP-J8 Packages AEC-Q100 Qualified Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays w w w . ro h m .c o m TSZ02201-0R1R0G100200-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/34 09.Sep.2014 Rev.001 TSZ2211114001 Datasheet BR25H256-2AC Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Supply Voltage Vcc -0.3 to +6.5 V (Note1) 0.56 (SOP8) Power Dissipation Pd W (Note2) 0.56 (SOP-J8) Storage Temperature Range Tstg -65 to +150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to Vcc+0.3 V Electrostatic Discharge Voltage V -6000 to +6000 V ESD (Human Body Model) (Note1) Derate by 4.5mW/C when operating above Ta=25C. (Note2) Derate by 4.5mW/C when operating above Ta=25C. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Vcc=2.5V to 5.5V) Limit Parameter Unit Condition Min Typ Max 1,000,000 Cycles Ta85C (Note3, 4) Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C (Note3) Data Retention 60 Years Ta105C 50 Years Ta125C (Note3) Not 100% TESTED (Note4) The Write Cycles is defined for unit of 4 data bytes with the same address bits of A14 to A2. Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage Vcc 2.5 to 5.5 V Input Voltage V 0 to Vcc V IN Input / Output Capacitance (Ta=25C, Frequency=5MHz) Parameter Symbol Conditions Min Max Unit (Note5) Input Capacitance C V =GND 8 pF IN IN (Note5) Output Capacitance C V =GND 8 pF OUT OUT (Note5) Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100200-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/34 09.Sep.2014 Rev.001 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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