Product Information

BR25H320F-2LBH2

BR25H320F-2LBH2 electronic component of ROHM

Datasheet
EEPROM SPI BUS 32K 2.5-5.5 Industrial SOP8

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6883 ea
Line Total: USD 1.69

241 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
241 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 1.4835
10 : USD 1.3455
100 : USD 1.2535
500 : USD 1.1465
1000 : USD 1.1051
2500 : USD 1.0798
5000 : USD 1.0614
10000 : USD 1.0568
25000 : USD 1.0166

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Datasheet Serial EEPROM Series Industrial EEPROM 125 Operation SPI BUS EEPROM BR25H320F-2LB General Description This is the product guarantees long time support in Industrial market. BR25H320F-2LB is a serial EEPROM of SPI BUS interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) Long Time Support a Product for Industrial Applications. High speed clock action up to 10MHz (Max.) Wait function by HOLDB terminal. Part or whole of memory arrays settable as read only memory area by program. 2.5V to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at factory shipment. SOP8 For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) 5.00mm x 6.20mm x 1.71mm Self-timed programming cycle. Low Supply Current At Write Operation (5V) : 1.0mA (Typ.) At Read Operation (5V) : 1.0mA (Typ.) Application At Standby Operation (5V) : 0.1A (Typ.) Industrial Equipment Address auto increment function at read operation Prevention of write mistake Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Write mistake prevention function at low voltage. Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 Data kept for 50 years (Ta125). Data rewrite up to 300,000 times (Ta125). Page write Number of pages 32 Byte Product Number BR25H320F-2LB BR25H320F-2LB Capacity Bit Format Product Number Supply Voltage Package 32Kbit 4Kx8 BR25H320F-2LB 2.5V to 5.5V SOP8 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100350-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/28 27.Feb.2014 Rev.002 TSZ2211114001 DatasheetDatasheet BR25H320F-2LB (Ta=25C) Absolute maximum ratings Parameter Symbol Limits Unit Remarks Supply Voltage VCC -0.3 to +6.5 V Permissible Dissipation Pd 0.56 W When using at Ta=25 or higher 4.5mW to be reduced per 1. Storage Temperature Range Tstg -65 to +150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to VCC+0.3 V Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *1 Write Cycles 500,000 Cycles Ta105C Ta125C 300,000 Cycles Ta25C 100 Years *1 Ta105C Data Retention 60 Years 50 Years Ta125C *1: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *2 Input Capacity C V =GND 8 IN IN pF *2 Output Capacity C V =GND 8 OUT OUT *2: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100350-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/28 27.Feb.2014 Rev.002 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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