We are the renowned BR93LC46F-WE2 EEPROM seller and distributer in the USA, India, Europe, Australia, and beyond. BR93LC46F-WE2 EEPROM is a manufacturer from ROHM. X-ON Electronics Components provides affordable electronic EEPROM in the USA.

BR93LC46F-WE2

BR93LC46F-WE2 electronic component of ROHM
Part No.BR93LC46F-WE2
Manufacturer: ROHM
Category:EEPROM
Description: ROHM Semiconductor EEPROM EEPROMs Microwire Serial BUS Hi-Rel
Datasheet: BR93LC46F-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.7761 ea
Line Total: USD 1940.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.6417
5000 : USD 0.6302
10000 : USD 0.6302
25000 : USD 0.6141

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BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / Memory ICs BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W 6416bits serial EEPROM BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin. zz zz Applications VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and other battery-powered equipment requiring low voltage and low current zz zz Features 1) 64 words 16 bits EEPROM 6) A write instruction inhibit function allows : 2) Operating voltage range - write protection when power supply voltage is low. When reading : 2.0 to 5.5V - write disable state at power up. When writing : 2.7 to 5.5V - writing using command codes. 3) Low current consumption 7) Compact packages Operating (at 5V) : 3mA (Max.) 8) Display of READY / BUSY status Standby (at 5V) : 5 A (Max.) 9) TTL-compatible input / output 4) Address can be incremented automatically during 10) Rewriting possible up to 100,000 times read operations. 11) Data can be stored for ten years without corruption. 5) Auto erase and auto complete functions can be used during write operations. zz zz Block diagram Power supply CS voltage detector Command decode Control High voltage Write Clock generation generator disable SK Address Address 6bits Command 6bits buffer decoder DI register 1,024bits EEPROM array Data R / W 16bits 16bits register amplifier DO Dummy bitsBR93LC46-W / BR93LC46F-W / BR93LC46RF-W / Memory ICs BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W zz zz Pin descriptions CS 1 8 VCC N.C. 1 8 N.C. SK 2 BR93LC46-W 7 N.C. VCC 2 BR93LC46F-W 7 GND BR93LC46RF-W BR93LC46FJ-W DI 3 BR93LC46RFJ-W 6 N.C. CS 3 BR93LC46FV-W 6 DO DO 4 5 GND SK 4 5 DI Fig.1 Fig.2 Pin No. Pin BR93LC46-W BR93LC46F-W Function name BR93LC46RF-W BR93LC46FJ-W BR93LC46RFJ-W BR93LC46FV-W 13 CS Chip select input 24 SK Serial clock input 35 DI Start bit, operating code, address, and seria data input 46 DO Serial data output, READY / BUSY internal status display output 5 7 GND Ground 6 8 N.C. Not connected 7 1 N.C. Not connected 82 VCC Power supply z z Absolute maximum ratings (Ta = 25C) z z Symbol Parameter Limits Unit Applied voltage VCC 0.3~+6.5 V 1 BR93LC46-W 500 Power 2 BR93LC46F-W / RF-W / FJ-W / RFJ-W Pd 350 mW dissipation 3 BR93LC46FV-W 300 Storage temperature Tstg 65~+125 C Operating temperature Topr 40~+85 C Terminal voltage 0.3~VCC+0.3 V 1 Reduced by 5.0mW for each increase in Ta of 1C over 25C. 2 Reduced by 3.5mW for each increase in Ta of 1C over 25C. 3 Reduced by 3.0mW for each increase in Ta of 1C over 25C. z z Recommended operating conditions (Ta = 25C) z z Parameter Symbol Min. Typ. Max. Unit Writing 2.7 5.5 V Power supply VCC voltage Reading 2.0 5.5 V Input voltage VIN 0 VCC V

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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