Product Information

BRCA016GWZ-WE2

BRCA016GWZ-WE2 electronic component of ROHM

Datasheet
EEPROM I2C BUS(2-Wre) 16K UCSP30L1 EEPROM

Manufacturer: ROHM
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Price (USD)

1: USD 1.4499 ea
Line Total: USD 1.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.4508
9000 : USD 0.422
24000 : USD 0.422

     
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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCA016GWZ-W (16Kbit) General Description 2 BRCA016GWZ-W series is a serial EEPROM of I C BUS Interface Method. Features 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port. 1.7V to 3.6V Single Power Source Operation most suitable for battery use. Possible FAST MODE 400KHz operation Page Write Mode useful for initial value write at factory shipment. Self-timed Programming Cycle Low Current Consumption At Write Operation (5V) : 0.5mA (Typ) At Read Operation (5V) : 0.2mA (Typ) At Standby Operation (5V) : 0.1A (Typ) Prevention of Write Mistake Write (write protect) function added Prevention of write mistake at low voltage UCSP30L1 Compact Package W(Typ) x D(Typ) x H(Max) :1.30mm x 0.77mm x 0.35mm More than 1 million write cycles More than 40 years data retention Noise Filter Built in SCL / SDA terminal Initial Delivery State FFh BRCA016GWZ-W Capacity Bit Format Type Power Source Voltage Package 16Kbit 2K8 BRCA016GWZ-W 1.7V to 3.6V UCSP30L1 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limit Unit Remark Supply Voltage V -0.3 to +6.5 V CC Permissible Dissipation Pd 220 mW Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 C Operating Temperature Topr -40 to +85 C Input Voltage/ - -0.3 to Vcc+1.0 V Output Voltage Memory Cell Characteristics (Ta=25C, Vcc=1.7V to 3.6V) Limit Parameter Unit Min Typ Max (1) Write Cycles 100,000- - Times (1) Data Retention 40 - - Years (1) Not 100% TESTED Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100510-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/22 TSZ2211114001 25.Feb.2013 Rev.002DatasheetDatasheet BRCA016GWZ-W (16Kbit) Recommended Operating Ratings Parameter Symbol Limit Unit Power Source Voltage Vcc 1.7 to 3.6 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.7V to 3.6V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V IH1 Input Low Voltage1 V -0.3 - +0.3Vcc V IL1 Output Low Voltage1 V - - 0.4 V I =3.0mA , 2.5VVcc3.6V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA , 1.7VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=3.6V , f =400kHz, t =5ms SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte Write, Page Write Vcc=3.6V , f =400kHz SCL Supply Current (Read) I - - 0.5 mA Random Read, Current Read, CC2 Sequential Read Vcc=3.6V , SDASCL=Vcc Standby Current I - - 2.0 A SB A0, A1, A2=GND, WP=GND AC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.7V to 3.6V) Limit Parameter Symbol Unit Min Typ Max Clock Frequency f - - 400 kHz SCL Data Clock High Period t 0.6 - - s HIGH Data Clock Low Period t 1.2 - - s LOW (1) SDA, SCL Rise Time t - - 0.3 s R (1) SDA, SCL Fall Time t - - 0.3 s F Start Condition Hold Time t 0.6 - - s HD:STA Start Condition Setup Time t 0.6 - - s SU:STA Input Data Hold Time t 0 - - ns HD:DAT Input Data Setup Time t 100 - - ns SU:DAT Output Data Delay Time t 0.1 - 0.9 s PD Output Data Hold Time t 0.1 - - s DH Stop Condition Setup Time t 0.6 - - s SU:STO Bus Free Time t 1.2 - - s BUF Write Cycle Time t - - 5 ms WR Noise Spike Width(SDA,SCL terminal) t - - 0.1 s I WP Hold Time t 1.0 - - s HD:WP WP Setup Time t 0.1 - - s SU:WP WP High Period t 1.0 - - s HIGH:WP (1) Not 100% TESTED www.rohm.com TSZ02201-0R2R0G100510-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/22 TSZ2211115001 25.Feb.2013 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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