X-On Electronics has gained recognition as a prominent supplier of BSM600C12P3G201 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM600C12P3G201 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM600C12P3G201 ROHM

Name: BSM600C12P3G201
Brand: ROHM
SKU: BSM600C12P3G201_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

BSM600C12P3G201 electronic component of ROHM

BSM600C12P3G201 Discrete Semiconductor Modules

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Part No.	BSM600C12P3G201
Manufacturer:	ROHM
Category:	Discrete Semiconductor Modules
Description:	Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02
Datasheet:	BSM600C12P3G201 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1783.4645 ea
Line Total: USD 1783.46

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSM600C12P3G201 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Jun to Thu. 03 Jul MOQ : 1 Multiples : 1	1 : USD 1783.4645

0 Ship by Wed. 25 Jun to Fri. 27 Jun MOQ : 4 Multiples : 4	4 : USD 1372.8 12 : USD 1365.045 28 : USD 1322.475 52 : USD 1320

We are delighted to provide the BSM600C12P3G201 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM600C12P3G201 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

SiC Power Module Datasheet BSM600C12P3G201 Application Circuit diagram 1 Motor drive 7 Converter Photovoltaics, wind power generation. 9 ( N. C ) 8 3, 4 Features 6 5 10 1) Low surge, low switching loss. 1TC 11 2) High-speed switching possible. 2 Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 SS 1 G 1 TH1 TH2 8 9 7 10 1 1 4 1 3 2 6 5 G 2 S S2 www.rohm.com 1/10 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. BSM600C12P3G201 Datasheet Absolute maximum ratings (T = 25C) j Symbol Parameter Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V Repetitive Reverse Voltage Clamp diode 1200 RRM V Gate - Source Voltage (+) D-S short 22 V GSS V D-S short Gate - Source Voltage (-) -4 GSS G - S Voltage (t <300nsec) V D-S short GSSsurge -4 to 26 surge I DC(Tc=60C) VGS=18V 576 D I Drain Current DC(Tc=50 ) VGS=18V 600 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 1200 DRM Note 2) I DC(Tc=60C) VGS=18V 576 S I DC(Tc=50C) VGS=18V 600 A S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 1200 SRM Note 2) I Pulse (Tc = 60C 1ms VGS=0V SRM Note 2) 1200 I DC(Tc = 60 ) 600 F Forward Current (clamp diode) Note 1) I Pulse (Tc = 60 1ms 1200 FRM Note 2 Total Power Dissipation Ptot Tc = 25C 2460 W Note 3) Max Junction Temperature Tjmax 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V t s u r g e +22V -4V www.rohm.com 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category Discrete Semiconductor Modules Discrete Semiconductor Modules
RoHS - XON Y Y
Product Power Semiconductor Modules Power Semiconductor Modules
Type Sic Power Module Sic Power Module
Vf - Forward Voltage 1.8 v @ 600 a 1.8 v @ 600 a
Vgs - Gate-Source Voltage - 4 v , 22 V - 4 v , 22 V
Mounting Style Screw Mount Screw Mount
Package / Case MODULE MODULE
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 150 C + 150 C
Series Bsmx Bsmx
Packaging Tray Tray
Technology Sic Sic
Configuration Chopper Chopper
Brand Rohm Semiconductor Rohm Semiconductor
Transistor Polarity N - Channel N - Channel
Typical Delay Time 70 ns 70 ns
Fall Time 65 ns 65 ns
Id - Continuous Drain Current 576 A 576 A
Pd - Power Dissipation 2460 W 2460 W
Product Type Discrete Semiconductor Modules Discrete Semiconductor Modules
Rise Time 50 ns 50 ns
Factory Pack Quantity : 4 4
Subcategory Discrete Semiconductor Modules Discrete Semiconductor Modules
Typical Turn-Off Delay Time 240 ns 240 ns
Typical Turn-On Delay Time 70 ns 70 ns
Vds - Drain-Source Breakdown Voltage 1200 V 1200 V
Vgs Th - Gate-Source Threshold Voltage 2.7 V 2.7 V