BSS5130AHZGT116 ROHM

BSS5130AHZGT116 electronic component of ROHM
BSS5130AHZGT116 ROHM
BSS5130AHZGT116 Bipolar Transistors - BJT
BSS5130AHZGT116  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS5130AHZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSS5130AHZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BSS5130AHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 1 A 320MHz 200 mW Surface Mount SST3
Datasheet: BSS5130AHZGT116 Datasheet (PDF)
Price (USD)
1: USD 0.6975 ea
Line Total: USD 0.7 
Availability : 0
  
QtyUnit Price
1$ 0.6975
10$ 0.4288
100$ 0.253
500$ 0.1903
1000$ 0.1738
3000$ 0.1496
6000$ 0.1375
9000$ 0.1276
24000$ 0.1265

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3536
6000$ 0.3203
15000$ 0.2996
30000$ 0.2924


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.246
10$ 0.9706
100$ 0.6612
500$ 0.4959
1000$ 0.372


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.246
10$ 0.9706
100$ 0.6612
500$ 0.4959
1000$ 0.372


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6975
10$ 0.4288
100$ 0.253
500$ 0.1903
1000$ 0.1738
3000$ 0.1496
6000$ 0.1375
9000$ 0.1276
24000$ 0.1265

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS5130AHZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS5130AHZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BSS5130A HZG General purpose amplification (-30V, -1A) Datasheet AEC-Q101 Qualified llOutline SOT-23 Parameter Value V -30V CEO I -1A C SST3 llFeatures llInner circuit 1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat)-380mV at I =-500mA/I =-25mA C B 3)Complements the BSS4130A HZG. llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Taping Reel size Tape width Quantity Part No. Package Marking code (mm) (mm) (pcs) SST3 BSS5130A HZG T116 180 8 3000 K4N (SOT-23) www.rohm.com 1/6 20200521 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.BSS5130A HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E V = -30V - - -100 nA CB Collector cut-off current I CBO V = -30V, T = 150 - - -50 A CB a Emitter cut-off current I V = -6V - - -100 nA EBO EB V 1 I = -100mA, I = -1mA - -100 -220 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = -500mA, I = -25mA - -180 -380 mV CE(sat) C B Base-emitter saturation voltage V I = -1A, I = -100mA - - -1.1 V BE(sat) C B Base-emitter turn *4 V = -2V, I = -100mA V - - -0.75 V CE C BE(on) on voltage *4 V = -2V, I = -100mA 270 - 680 h 1 CE C FE DC current gain - *4 V = -2V, I = -1A 90 - 680 h 2 CE C FE V = -2V, I = 100mA, CE E *4 Transition frequency f - 320 - MHz T f = 100MHz V = -10V, I = 0A CB E Output capacitance C - 7 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. *3 Mounted on ceramic board (7.05.00.6mm). *4Measured using pulse current. www.rohm.com 2/6 20200521 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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