Product Information

BSM600D12P3G001

BSM600D12P3G001 electronic component of ROHM

Datasheet
Discrete Semiconductor Modules 1200V 576A HALF BRIDGE SIC

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2041.641 ea
Line Total: USD 2041.64

3 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 2099.2444

     
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SiC Power Module Datasheet BSM600D12P3G001 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D 1 S S1 G 1 TH 1 T H2 8 9 7 1 0 1 1 4 1 3 2 6 5 G2 SS 2 www.rohm.com 3.Apr.2019 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. 1/10 BSM600D12P3G001 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V D-S short 22 Gate - Source Voltage (+) GSS V V Gate - Source Voltage (-) D-S short -4 GSS V G - S Voltage (t <300nsec) D-S short -4 to 26 GSSsurge surge I DC(Tc=60C) VGS=18V 576 D Drain Current I DC(Tc=50 ) VGS=18V D 600 Note 1) I Pulse (Tc = 60C 1ms VGS=18V 1200 DRM Note 2) I DC(Tc=60C) VGS=18V 576 S A I DC(Tc=50 ) VGS=18V 600 S I Source Current DC(Tc=60C) VGS=0V 418 S Note 1) I Pulse (Tc = 60C 1ms VGS=18V 1200 SRM Note 2) I Pulse (Tc = 60C 10us VGS=0V SRM Note 2) 1200 Total Power Dissipation Ptot Tc = 25C 2450 W Note 3) Tjmax 175 Max Junction Temperature Tjop -40 to 150 C Junction Temperature Storage Temperature Tstg -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. Isolation Voltage 2500 Vrms Main Terminals : M6 screw 4.5 - N m Mounting Torque Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable V waveform Wavelength for Switching Test GS E o n =I d V d s E o f f= I d V d s +26V t r r t s u r g e V s u rg e V D S +22V 90 % 9 0% 1 0 % 1 0% 1 0 % 2 % 2 % 2 % 2% I D 9 0 % 1 0 % V G S t d (o n ) t r td ( o ff ) tf -4V www.rohm.com 3.Apr.2019 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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