X-On Electronics has gained recognition as a prominent supplier of QS6J1TR mosfet across the USA, India, Europe, Australia, and various other global locations. QS6J1TR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

QS6J1TR ROHM

QS6J1TR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.QS6J1TR
Manufacturer: ROHM
Category:MOSFET
Description: Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)
Datasheet: QS6J1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

142: USD 0.2877 ea
Line Total: USD 40.85

Availability - 1358
Ships to you between
Tue. 11 Jun to Mon. 17 Jun
MOQ: 142  Multiples: 1
Pack Size: 1
Availability Price Quantity
2884 - WHS 1


Ships to you between Mon. 17 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 0.583
10 : USD 0.5106
100 : USD 0.3611
500 : USD 0.3105
1000 : USD 0.2714
3000 : USD 0.2461
6000 : USD 0.2392
9000 : USD 0.2323
24000 : USD 0.23

429 - WHS 2


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 152
Multiples : 1
152 : USD 0.7006
250 : USD 0.6725

1358 - WHS 3


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 142
Multiples : 1
142 : USD 0.2877
200 : USD 0.286
500 : USD 0.2324
1000 : USD 0.2177

5820 - WHS 4


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 152
Multiples : 1
152 : USD 0.7006
250 : USD 0.6725
500 : USD 0.6482
1000 : USD 0.627
2500 : USD 0.6085
5000 : USD 0.5921

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the QS6J1TR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6J1TR and other electronic components in the MOSFET category and beyond.

QS6J1 Datasheet -20V Pch+Pch Small Signal MOSFET llOutline SOT-457T V -20V DSS SC-95 R (Max.) 215m DS(on) TSMT6 I 1.5A D P 1.25W D llFeatures llInner circuit 1) Low on-resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 1.5 A D *1 I Pulsed drain current 6 A DP Gate - Source voltage V 12 V GSS *2 P 1.25 D Power dissipation (total) W *3 P 0.95 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20181106 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. QS6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 132 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -18.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -0.7 - -2.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.3 - mV/ temperature coefficient T j referenced to 25 V = -4.5V, I = -1.5A - 155 215 GS D Static drain - source *4 R V = -4.0V, I = -1.5A - 170 235 m DS(on) GS D on - state resistance V = -2.5V, I = -0.75A - 310 430 GS D Forward Transfer *4 Y V = -10V, I = -0.75A 1.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/11 20181106 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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