QS6K21TR ROHM

QS6K21TR electronic component of ROHM
QS6K21TR ROHM
QS6K21TR MOSFETs
QS6K21TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QS6K21TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS6K21TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. QS6K21TR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 45V 1A 1.25W Surface Mount TSMT6 (SC-95)
Datasheet: QS6K21TR Datasheet (PDF)
Price (USD)
1: USD 1.0462 ea
Line Total: USD 1.05 
Availability : 1687
  
Ship by Thu. 20 Nov to Mon. 24 Nov
QtyUnit Price
1$ 1.0462
10$ 0.6512
100$ 0.3795
500$ 0.3036
1000$ 0.2794
3000$ 0.2409
6000$ 0.2277
9000$ 0.2167

Availability 1687
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0462
10$ 0.6512
100$ 0.3795
500$ 0.3036
1000$ 0.2794
3000$ 0.2409
6000$ 0.2277
9000$ 0.2167


Availability 59
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.303
10$ 1.173
30$ 0.8257
100$ 0.689
500$ 0.6647
1000$ 0.6537


Availability 1852
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 230
Multiples : 1
QtyUnit Price
230$ 1.2844
500$ 0.7995
1000$ 0.5012

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS6K21TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6K21TR and other electronic components in the MOSFETs category and beyond.

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QS6K21 Datasheet 45V Nch+Nch Small Signal MOSFET llOutline SOT-457T V 45V DSS SC-95 R (Max.) 420m DS(on) TSMT6 I 1.0A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K21 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS Continuous drain current I 1.0 A D *1 I Pulsed drain current 2.0 A DP Gate - Source voltage V 12 V GSS *2 P 1.25 D Power dissipation (total) W *3 P 0.95 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170223 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. QS6K21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 132 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T j referenced to 25 V = 4.5V, I = 1.0A - 300 420 GS D Static drain - source *4 R V = 4.0V, I = 1.0A - 310 435 m DS(on) GS D on - state resistance V = 2.5V, I = 1.0A - 415 585 GS D R Gate resistance f = 1MHz, open drain - 11 - G Forward Transfer *4 Y V = 10V, I = 1A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170223 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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