X-On Electronics has gained recognition as a prominent supplier of QS6K21TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS6K21TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS6K21TR ROHM

QS6K21TR electronic component of ROHM
QS6K21TR ROHM
QS6K21TR MOSFETs
QS6K21TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. QS6K21TR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 45V 1A 1.25W Surface Mount TSMT6 (SC-95)
Datasheet: QS6K21TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.035 ea
Line Total: USD 1.03 
Availability - 3501
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
59
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 1.2792
10 : USD 1.1516
30 : USD 0.8107
100 : USD 0.6766
500 : USD 0.6526
1000 : USD 0.6417

3501
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 1.035
10 : USD 0.6425
100 : USD 0.3751
500 : USD 0.2981
1000 : USD 0.2761
3000 : USD 0.2486
6000 : USD 0.2277
9000 : USD 0.2167

2910
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 532
Multiples : 1
532 : USD 0.4888
685 : USD 0.3796
1000 : USD 0.3497
3000 : USD 0.29

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the QS6K21TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6K21TR and other electronic components in the MOSFETs category and beyond.

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QS6K21 Datasheet 45V Nch+Nch Small Signal MOSFET llOutline SOT-457T V 45V DSS SC-95 R (Max.) 420m DS(on) TSMT6 I 1.0A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K21 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS Continuous drain current I 1.0 A D *1 I Pulsed drain current 2.0 A DP Gate - Source voltage V 12 V GSS *2 P 1.25 D Power dissipation (total) W *3 P 0.95 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170223 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. QS6K21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 132 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T j referenced to 25 V = 4.5V, I = 1.0A - 300 420 GS D Static drain - source *4 R V = 4.0V, I = 1.0A - 310 435 m DS(on) GS D on - state resistance V = 2.5V, I = 1.0A - 415 585 GS D R Gate resistance f = 1MHz, open drain - 11 - G Forward Transfer *4 Y V = 10V, I = 1A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170223 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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