QS6Z5TR ROHM

QS6Z5TR electronic component of ROHM
QS6Z5TR ROHM
QS6Z5TR Bipolar Transistors - BJT
QS6Z5TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QS6Z5TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QS6Z5TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. QS6Z5TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN/PNP 50V 1A 6-Pin TSMT T/R
Datasheet: QS6Z5TR Datasheet (PDF)
Price (USD)
721: USD 0.3606 ea
Line Total: USD 259.99 
Availability : 2834
  
Ship by Wed. 01 Oct to Tue. 07 Oct
QtyUnit Price
721$ 0.3606
748$ 0.3476
1000$ 0.3363
2500$ 0.3139

Availability 1654
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3875
10$ 0.8328
100$ 0.5181
500$ 0.4246
1000$ 0.3883
3000$ 0.3443
6000$ 0.3366
9000$ 0.3223


Availability 2834
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 721
Multiples : 1
QtyUnit Price
721$ 0.3606
748$ 0.3476
1000$ 0.3363
2500$ 0.3139


Availability 4979
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 1.586
500$ 0.9812
1000$ 0.65
3000$ 0.6462

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS6Z5TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS6Z5TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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QS6Z5 Datasheet Complex Midium Power Transistors <For Tr1(NPN)> llOutline Parameter Value SOT-457T V 50V CEO SC-95 I 1A C <For Tr2(PNP)> TSMT6 Parameter Value V -50V CEO I -1A C llFeatures llInner circuit 1)Low saturation voltage. V =350mV(Max.)(I /I )=500mA/25mA) CE(sat) C B V =-400mV(Max.)(I /I )=-500mA/-25mA) CE(sat) C B 2)High speed switching llApplication Low frequency amplifier, High speed switching llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QS6Z5 2928 TR 180 8 3000 Z05 (TSMT6) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(NPN) Tr2(PNP) Unit V Collector-base voltage 50 -50 V CBO Collector-emitter voltage V 50 -50 V CEO V Emitter-base voltage 6 -6 V EBO I 1 -1 A C Collector current *1 I 2 -2 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 1/9 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.QS6Z5 Datasheet llElectrical characteristics (T = 25C) <For Tr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 100A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 50V - - 1.0 A CBO CB I V = 4V Emitter cut-off current - - 1.0 A EBO EB *5 Collector-emitter saturation voltage V I = 500mA, I = 25mA - 130 350 mV CE(sat) C B h V = 2V, I = 50mA DC current gain 180 - 450 - FE CE C V = 10V, I = -200mA, CE E *5 Transition frequency f - 360 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz t Turn-On time - 40 - ns on I = 500mA,V 10V, C CC t Storage time I = 50mA,I = -50mA, - 410 - ns stg B1 B2 (See test circuit) t Fall time - 75 - ns f llElectrical characteristics (T = 25C) <For Tr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -100A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -50V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *5 Collector-emitter saturation voltage V I = -500mA, I = -25mA - -200 -400 mV CE(sat) C B h V = -2V, I = -50mA DC current gain 180 - 450 - FE CE C V = -10V, I = 200mA, CE E *5 Transition frequency f - 400 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz Turn-On time ton - 40 - ns I = -500mA,V -10V C CC Storage time tstg - 250 - ns I = -50mA,I = 50mA B1 B2 (See test circuit) Fall time tf - 35 - ns *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a 25mm25mm0.8mm ceramic board. *4 0.9W per element must not be exceeded. *5 Pulsed www.rohm.com 2/9 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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