RB060M-40DDTR ROHM

1 Schottky Barrier Diode RB060M-40DD Datasheet AEC-Q101 Qualified Applications External Dimensions(Unit : mm) Land Size Figure(Unit : mm) General rectification 0.10.1 0.05 1.2 1.60.1 Features 1)Small power mold type.(PMDU) 2)High reliability PMDU Construction Silicon epitaxial Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping Dimensions(Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 1.550.05 1.810.1 4.00.1 11.0.00.10.1 1.5MAX Absolute Maximum Ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 40 V RM Reverse voltage (DC) V 40 V R Average rectified forward current (*1) Io 2 A Forward current surge peak (60Hz1cyc) I 30 A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C (*1)Mounting on epoxi board. 180Half sine wave Electrical Characteristics(Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =2.0A Forward voltage 0.56 V F F I V =40V Reverse current 500 A R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.08 - Rev.B 1/4 2.60.1 3.50.0.122 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.710.08 3.05Data Sheet RB060M-40DD 10 100000 Ta = 150 C 10000 Ta = 150 C Ta = 125 C 1000 1 Ta = 125 C 100 Ta = 75 C 10 Ta = 75 C 0.1 1 Ta = 25 C Ta = 25 C 0.1 Ta = 25 C Ta = 25 C 0.01 0.01 0 100 200 300 400 500 600 010 20 30 40 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 520 f= 1MHz Ta=25 C 515 V =2A F n=30pcs 510 505 AVE : 497.1mV 100 500 495 490 485 480 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R 30 450 Ta=25 C Ta=25 C V =40V f=1MHz R 25 425 n=30pcs V =0V R n=10pcs 20 400 375 15 AVE : 6.7 A AVE : 333pF 350 10 325 5 300 0 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.08 - Rev.B 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I ( A) FORWARD CURRENT:I (A) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I ( A) R