RB061US-30TR ROHM

RB061US-30 Schottky Barrier Diode Data sheet Outline V 30 V R I 2 A o I 8 A FSM Features Inner Circuit High reliability Small power mold type Super low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking 613 Absolute Maximum Ratings (T =25C unless otherwise specified) a Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 30 V R Glass epoxy mounted I 60Hz half sin waveform Average rectified forward current 2 A o resistive loadper dIode 60Hz half sin waveformNon-repetitive I Peak forward surge current 8 A FSM one cycleper diodeT =25C a (1) T Junction temperature - 125 j T Storage temperature - -40 125 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics a Value per diode Parameter Symbol Conditions Min. Typ. Max. Unit V I =1A - 0.30 0.35 V F1 F Forward voltage V I =2A F2 - 0.35 0.40 V F I Reverse current V =15V - 280 900 A R R C V =20V f=1MHz Capacitance between terminals - 70 - pF t R t Reverse recovery time I =0.5A I =1A I =0.25*IR - - 20 ns rr F R rr Attention www.rohm.com 1/5 2017/05/16 Rev.001 2016 ROHM Co., Ltd. All rights reserved.RB061US-30 Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001