RB161VA-20TR ROHM

Data Sheet Schottky Barrier Diode RB161VA-20 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 Features 1)Small power mold type.TUMD2 2)Low V F 3)High reliability TUMD2 Construction Silicon epitaxial planar Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 4.00.1 1.00.2 1.430.05 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 30 V RM V Reverse voltage (DC) 20 V R Average rectified forward current Io 1 A Forward current surge peak (60Hz1cyc) I 5 A FSM Junction temperature 125 Tj C Storage temperature Tstg 40 to 125 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V 1 - 0.33 0.37 V I =700mA F F Forward voltage V 2 - 0.38 0.42 AI =1A F F Reverse current I - 0.2 1 mA V =20V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5RB161VA-20 Data Sheet Ta=125 1000 100000 1000 Ta=75 f=1MHz 10000 Ta=75 Ta=125 100 100 1000 Ta=25 Ta=25 100 10 10 Ta=-25 Ta=-25 10 1 1 1 0 100 200 300 400 500 0 5 10 15 20 25 30 010 20 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 420 1000 350 Ta=25 Ta=25 Ta=25 900 VR=20V VF=1A IF=0.7A 410 800 340 n=30pcs n=30pcs n=30pcs 700 330 400 600 500 390 320 400 300 380 310 200 AVE:332.9mV AVE:386.8mV 100 AVE:205.9uA 370 300 0 IR DISPERSION MAP VF DISPERSION MAP VF DISPERSION MAP 30 200 20 Ta=25 190 Ta=25 Ifsm 1cyc IF=0.5A 25 f=1MHz 180 IR=1A VR=0V 15 Irr=0.25*IR 8.3ms 170 n=10pcs 20 n=10pcs 160 150 15 10 140 10 130 5 120 5 AVE:160.3pF AVE:13.6A 110 AVE:9.3ns 100 0 0 Ct DISPERSION MAP trr DISPERSION MAP IFSM DISRESION MAP 1000 Mounted on epoxy board 20 30 IM=10mA IF=0.2A Ifsm 25 Ifsm t 15 time Rth(j-a) 1ms 8.3ms 8.3ms 20 1cyc 300us 100 10 15 Rth(j-c) 10 5 5 0 0 10 110 100 1 10 100 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) NUMBER OF CYCLES TIME:t(s) IFSM-t CHARACTERISTICS IFSM-CYCLE CHARACTERISTICS Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(mA) PEAK SURGE TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(uA) PEAK SURGE FORWARD VOLTAGE:VF(mV) PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A) TRANSIENT CAPACITANCE BETWEEN REVERSE CURRENT:IR(uA) REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) TERMINALS:Ct(pF)