RB095T-90 ROHM

Data Sheet Schottky barrier diode RB095T-90 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability 9 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 90 V RM Reverse voltage (DC) V 90 V R 6 Average rectified forward current (*1) Io A 100 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=127 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.75 V I =3A F F I Reverse current - - 150 A V =90V R R Thermal impedance - - 1.75 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.D 1/3 Not Recommended for New DesignsRB095T-90 Data Sheet Electrical characteristic curves 1000 10 100000 Ta=150 C Ta=125 C f=1MHz 10000 Ta=150 C Ta=75C 1000 100 1 Ta=125 C 100 Ta=25 C Ta=75 C Ta=25 C 10 Ta=-25 C 10 0.1 Ta=-25C 1 0.1 0.01 1 0.01 010 20 30 0 1020 3040 5060 7080 90 0 100 200 300 400 500 600 700 800 900 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -Ct CHARACTERISTICS V -I CHARACTERISTICS R V -I CHARACTERISTICS R R F F 200 750 400 Ta=25 C 180 Ta=25 C 390 Ta=25C I =10A F V =90V R 160 f=1MHz 740 n=30pcs 380 n=30pcs V =0V R 140 370 n=10pcs 120 730 360 100 350 720 80 340 AVE:357.9pF 60 330 AVE:13.7uA 710 40 320 AVE:715.7mV 20 310 700 0 300 I DISPERSION MAP V DISPERSION MAP R F Ct DISPERSION MAP 1000 30 300 Ta=25 C Ifsm Ifsm 1cyc I =0.5A 25 F 250 I =1A R 8.3ms 8.3ms Irr=0.25*I R 8.3ms 200 20 1cyc n=10pcs 150 15 100 AVE:86.0A 10 100 AVE:8.30ns 50 5 0 0 10 110 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 100 10 1000 IM=100mA I =6A F Ifsm 8 t 1ms time DC Rth(j-a) 10 300us D=1/2 6 100 Sin( =180) 4 Rth(j-c) 1 2 0 10 0.1 110 100 0246 8 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED I -t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT : Io(A) FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F FSM REVERSE CURRENT:I (uA) R TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (uA) R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) DISSIPATION:Pf(W) FSM